TY - JOUR
T1 - All-polymer FET based on simple photolithographic micro-patterning of electrically conducting polymer
AU - Lee, Myung Sub
AU - Lee, Sung Bum
AU - Lee, Jun Young
AU - Kang, Han Saem
AU - Kang, Hyun Suk
AU - Joo, Jinsoo
AU - Epstein, Arthur J.
N1 - Funding Information:
Authors would like to acknowledge the financial support of 21 C Frontier R&D Program (2002) by Ministry of Science and Technology, Korea. *Corresponding author. Fax: 82-31-290-7330, E-mail: jylee7@skku.ac.kr
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003
Y1 - 2003
N2 - We fabricated All-polymer FET (field effect transistor) whose substrate., insulating layer, active layer, and electrodes were composed of the organic polymeric materials. Active layer and all electrodes were made by the simple photolithographic micro-patterning of the electrically conducting poly(3,4-ethylenedioxythiophene). We figured out source-drain current (I SD) of the FET decreased with increase of the positive gate voltage (VG), implying the p-type FET worked in the depletion mode. Turn-off gate voltage, trans-conductance and on/off ratio were measured to be +30 V, -1. 2 μA/V, and 104, respectively. We believe the All-polymer FET has significant advantages over other existing organic FETs since the device can be fabricated by the simple process at room temperature.
AB - We fabricated All-polymer FET (field effect transistor) whose substrate., insulating layer, active layer, and electrodes were composed of the organic polymeric materials. Active layer and all electrodes were made by the simple photolithographic micro-patterning of the electrically conducting poly(3,4-ethylenedioxythiophene). We figured out source-drain current (I SD) of the FET decreased with increase of the positive gate voltage (VG), implying the p-type FET worked in the depletion mode. Turn-off gate voltage, trans-conductance and on/off ratio were measured to be +30 V, -1. 2 μA/V, and 104, respectively. We believe the All-polymer FET has significant advantages over other existing organic FETs since the device can be fabricated by the simple process at room temperature.
KW - All-polymer FET
KW - Electrically conducting polymer
KW - Field effect transistor
KW - Photolithographic micro-patterning
KW - Poly(3,4-ethylenedioxythiophene)
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U2 - 10.1080/15421400390263541
DO - 10.1080/15421400390263541
M3 - Article
AN - SCOPUS:10644245245
VL - 405
SP - 171
EP - 178
JO - Molecular Crystals and Liquid Crystals
JF - Molecular Crystals and Liquid Crystals
SN - 1542-1406
ER -