All-polymer FET based on simple photolithographic micro-patterning of electrically conducting polymer

Myung Sub Lee; Sung Bum Lee; Jun Young Lee; Han Saem Kang; Hyun Suk Kang; Jinsoo Joo; Arthur J. Epstein

doi:10.1080/15421400390263541

All-polymer FET based on simple photolithographic micro-patterning of electrically conducting polymer

Myung Sub Lee, Sung Bum Lee, Jun Young Lee, Han Saem Kang, Hyun Suk Kang, Jinsoo Joo, Arthur J. Epstein

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We fabricated All-polymer FET (field effect transistor) whose substrate., insulating layer, active layer, and electrodes were composed of the organic polymeric materials. Active layer and all electrodes were made by the simple photolithographic micro-patterning of the electrically conducting poly(3,4-ethylenedioxythiophene). We figured out source-drain current (I _SD) of the FET decreased with increase of the positive gate voltage (V_G), implying the p-type FET worked in the depletion mode. Turn-off gate voltage, trans-conductance and on/off ratio were measured to be +30 V, -1. 2 μA/V, and 10⁴, respectively. We believe the All-polymer FET has significant advantages over other existing organic FETs since the device can be fabricated by the simple process at room temperature.

Original language	English
Pages (from-to)	171-178
Number of pages	8
Journal	Molecular Crystals and Liquid Crystals
Volume	405
DOIs	https://doi.org/10.1080/15421400390263541
Publication status	Published - 2003

Keywords

All-polymer FET
Electrically conducting polymer
Field effect transistor
Photolithographic micro-patterning
Poly(3,4-ethylenedioxythiophene)

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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10.1080/15421400390263541

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title = "All-polymer FET based on simple photolithographic micro-patterning of electrically conducting polymer",

abstract = "We fabricated All-polymer FET (field effect transistor) whose substrate., insulating layer, active layer, and electrodes were composed of the organic polymeric materials. Active layer and all electrodes were made by the simple photolithographic micro-patterning of the electrically conducting poly(3,4-ethylenedioxythiophene). We figured out source-drain current (I SD) of the FET decreased with increase of the positive gate voltage (VG), implying the p-type FET worked in the depletion mode. Turn-off gate voltage, trans-conductance and on/off ratio were measured to be +30 V, -1. 2 μA/V, and 104, respectively. We believe the All-polymer FET has significant advantages over other existing organic FETs since the device can be fabricated by the simple process at room temperature.",

keywords = "All-polymer FET, Electrically conducting polymer, Field effect transistor, Photolithographic micro-patterning, Poly(3,4-ethylenedioxythiophene)",

author = "Lee, {Myung Sub} and Lee, {Sung Bum} and Lee, {Jun Young} and Kang, {Han Saem} and Kang, {Hyun Suk} and Jinsoo Joo and Epstein, {Arthur J.}",

year = "2003",

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language = "English",

volume = "405",

pages = "171--178",

journal = "Molecular Crystals and Liquid Crystals",

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T1 - All-polymer FET based on simple photolithographic micro-patterning of electrically conducting polymer

AU - Lee, Myung Sub

AU - Lee, Sung Bum

AU - Lee, Jun Young

AU - Kang, Han Saem

AU - Kang, Hyun Suk

AU - Joo, Jinsoo

AU - Epstein, Arthur J.

PY - 2003

Y1 - 2003

N2 - We fabricated All-polymer FET (field effect transistor) whose substrate., insulating layer, active layer, and electrodes were composed of the organic polymeric materials. Active layer and all electrodes were made by the simple photolithographic micro-patterning of the electrically conducting poly(3,4-ethylenedioxythiophene). We figured out source-drain current (I SD) of the FET decreased with increase of the positive gate voltage (VG), implying the p-type FET worked in the depletion mode. Turn-off gate voltage, trans-conductance and on/off ratio were measured to be +30 V, -1. 2 μA/V, and 104, respectively. We believe the All-polymer FET has significant advantages over other existing organic FETs since the device can be fabricated by the simple process at room temperature.

AB - We fabricated All-polymer FET (field effect transistor) whose substrate., insulating layer, active layer, and electrodes were composed of the organic polymeric materials. Active layer and all electrodes were made by the simple photolithographic micro-patterning of the electrically conducting poly(3,4-ethylenedioxythiophene). We figured out source-drain current (I SD) of the FET decreased with increase of the positive gate voltage (VG), implying the p-type FET worked in the depletion mode. Turn-off gate voltage, trans-conductance and on/off ratio were measured to be +30 V, -1. 2 μA/V, and 104, respectively. We believe the All-polymer FET has significant advantages over other existing organic FETs since the device can be fabricated by the simple process at room temperature.

KW - All-polymer FET

KW - Electrically conducting polymer

KW - Field effect transistor

KW - Photolithographic micro-patterning

KW - Poly(3,4-ethylenedioxythiophene)

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