Alpha particle detection with GaN Schottky diodes

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. A. Kozhukhova, I. M. Gazizov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, A. V. Korulin, V. M. Zalyetin, S. J. Pearton, In-Hwan Lee, A. M. Dabiran, P. P. Chow

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 1015 cm-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec-0.6 eV traps, increased in MBE grown films.

Original languageEnglish
Article number103708
JournalJournal of Applied Physics
Volume106
Issue number10
DOIs
Publication statusPublished - 2009 Dec 16
Externally publishedYes

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Schottky diodes
alpha particles
detectors
traps
metalorganic chemical vapor deposition
molecular beam epitaxy
radiation detectors
space charge
electrical properties
electric potential
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Kozhukhova, E. A., Gazizov, I. M., ... Chow, P. P. (2009). Alpha particle detection with GaN Schottky diodes. Journal of Applied Physics, 106(10), [103708]. https://doi.org/10.1063/1.3261806

Alpha particle detection with GaN Schottky diodes. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Kozhukhova, E. A.; Gazizov, I. M.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; Korulin, A. V.; Zalyetin, V. M.; Pearton, S. J.; Lee, In-Hwan; Dabiran, A. M.; Chow, P. P.

In: Journal of Applied Physics, Vol. 106, No. 10, 103708, 16.12.2009.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Kozhukhova, EA, Gazizov, IM, Kolin, NG, Merkurisov, DI, Boiko, VM, Korulin, AV, Zalyetin, VM, Pearton, SJ, Lee, I-H, Dabiran, AM & Chow, PP 2009, 'Alpha particle detection with GaN Schottky diodes', Journal of Applied Physics, vol. 106, no. 10, 103708. https://doi.org/10.1063/1.3261806
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kozhukhova EA, Gazizov IM et al. Alpha particle detection with GaN Schottky diodes. Journal of Applied Physics. 2009 Dec 16;106(10). 103708. https://doi.org/10.1063/1.3261806
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Markov, A. V. ; Kozhukhova, E. A. ; Gazizov, I. M. ; Kolin, N. G. ; Merkurisov, D. I. ; Boiko, V. M. ; Korulin, A. V. ; Zalyetin, V. M. ; Pearton, S. J. ; Lee, In-Hwan ; Dabiran, A. M. ; Chow, P. P. / Alpha particle detection with GaN Schottky diodes. In: Journal of Applied Physics. 2009 ; Vol. 106, No. 10.
@article{99e6535e9ab5456a8cf7e5f1e20f75af,
title = "Alpha particle detection with GaN Schottky diodes",
abstract = "Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 1015 cm-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100{\%} for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec-0.6 eV traps, increased in MBE grown films.",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Kozhukhova, {E. A.} and Gazizov, {I. M.} and Kolin, {N. G.} and Merkurisov, {D. I.} and Boiko, {V. M.} and Korulin, {A. V.} and Zalyetin, {V. M.} and Pearton, {S. J.} and In-Hwan Lee and Dabiran, {A. M.} and Chow, {P. P.}",
year = "2009",
month = "12",
day = "16",
doi = "10.1063/1.3261806",
language = "English",
volume = "106",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Alpha particle detection with GaN Schottky diodes

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Kozhukhova, E. A.

AU - Gazizov, I. M.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Korulin, A. V.

AU - Zalyetin, V. M.

AU - Pearton, S. J.

AU - Lee, In-Hwan

AU - Dabiran, A. M.

AU - Chow, P. P.

PY - 2009/12/16

Y1 - 2009/12/16

N2 - Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 1015 cm-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec-0.6 eV traps, increased in MBE grown films.

AB - Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 1015 cm-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec-0.6 eV traps, increased in MBE grown films.

UR - http://www.scopus.com/inward/record.url?scp=71749102000&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71749102000&partnerID=8YFLogxK

U2 - 10.1063/1.3261806

DO - 10.1063/1.3261806

M3 - Article

AN - SCOPUS:71749102000

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 103708

ER -