AlxGa1-xN p-i-n photodiodes on sapphire substrates

D. Walker, P. Kung, P. Sandvik, J. Wu, M. Hamilton, In-Hwan Lee, J. Diaz, M. Razeghi

Research output: Contribution to journalConference article

10 Citations (Scopus)

Abstract

We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0.05≤x≤0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m2 to 1 kW/m2) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-AlxGa1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non-exponential, with a decay time longer than the RC constant.

Original languageEnglish
Pages (from-to)193-198
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3629
Publication statusPublished - 1999 Jan 1
Externally publishedYes
EventProceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA
Duration: 1999 Jan 271999 Jan 29

Fingerprint

Low pressure chemical vapor deposition
Capacitance measurement
Aluminum Oxide
Sapphire
Photodiode
Metallorganic chemical vapor deposition
Photodiodes
Photocurrents
Transient analysis
photodiodes
sapphire
Substrate
Decay
Fabrication
Wavelength
Responsivity
Chemical Vapor Deposition
Transient Response
transient response
decay

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Walker, D., Kung, P., Sandvik, P., Wu, J., Hamilton, M., Lee, I-H., ... Razeghi, M. (1999). AlxGa1-xN p-i-n photodiodes on sapphire substrates. Proceedings of SPIE - The International Society for Optical Engineering, 3629, 193-198.

AlxGa1-xN p-i-n photodiodes on sapphire substrates. / Walker, D.; Kung, P.; Sandvik, P.; Wu, J.; Hamilton, M.; Lee, In-Hwan; Diaz, J.; Razeghi, M.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3629, 01.01.1999, p. 193-198.

Research output: Contribution to journalConference article

Walker, D, Kung, P, Sandvik, P, Wu, J, Hamilton, M, Lee, I-H, Diaz, J & Razeghi, M 1999, 'AlxGa1-xN p-i-n photodiodes on sapphire substrates', Proceedings of SPIE - The International Society for Optical Engineering, vol. 3629, pp. 193-198.
Walker, D. ; Kung, P. ; Sandvik, P. ; Wu, J. ; Hamilton, M. ; Lee, In-Hwan ; Diaz, J. ; Razeghi, M. / AlxGa1-xN p-i-n photodiodes on sapphire substrates. In: Proceedings of SPIE - The International Society for Optical Engineering. 1999 ; Vol. 3629. pp. 193-198.
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