Abstract
A method is presented for patterning the pentacene active layer of organic thin film transistor. The method involves forming a metal pattern on a gate dielectric surface by transfer patterning, depositing pentacene over the whole surface, and then lifting off a bilayer of pentacene on the metal with a flat elastomeric mold. Compared with the method of direct pentacene transfer reported earlier [S. Y. Park, T. Kwon, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 18, 1861 (2006)], this alternative allows one to choose a surface for larger pentacene grain size and eliminates a high off-current associated with the direct transfer method. The rigid nature of a rigiflex mold allows the pentacene pattern size to be defined in submicrometer range and the flexible nature of rigiflex and elastomeric molds permits large area application.
| Original language | English |
|---|---|
| Article number | 093505 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2007 Mar 9 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Alternative to pentacene patterning for organic thin film transistor. / Kim, Kyung Ho; Bong, Ki Wan; Lee, Hong H.
In: Applied Physics Letters, Vol. 90, No. 9, 093505, 09.03.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Alternative to pentacene patterning for organic thin film transistor
AU - Kim, Kyung Ho
AU - Bong, Ki Wan
AU - Lee, Hong H.
PY - 2007/3/9
Y1 - 2007/3/9
N2 - A method is presented for patterning the pentacene active layer of organic thin film transistor. The method involves forming a metal pattern on a gate dielectric surface by transfer patterning, depositing pentacene over the whole surface, and then lifting off a bilayer of pentacene on the metal with a flat elastomeric mold. Compared with the method of direct pentacene transfer reported earlier [S. Y. Park, T. Kwon, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 18, 1861 (2006)], this alternative allows one to choose a surface for larger pentacene grain size and eliminates a high off-current associated with the direct transfer method. The rigid nature of a rigiflex mold allows the pentacene pattern size to be defined in submicrometer range and the flexible nature of rigiflex and elastomeric molds permits large area application.
AB - A method is presented for patterning the pentacene active layer of organic thin film transistor. The method involves forming a metal pattern on a gate dielectric surface by transfer patterning, depositing pentacene over the whole surface, and then lifting off a bilayer of pentacene on the metal with a flat elastomeric mold. Compared with the method of direct pentacene transfer reported earlier [S. Y. Park, T. Kwon, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 18, 1861 (2006)], this alternative allows one to choose a surface for larger pentacene grain size and eliminates a high off-current associated with the direct transfer method. The rigid nature of a rigiflex mold allows the pentacene pattern size to be defined in submicrometer range and the flexible nature of rigiflex and elastomeric molds permits large area application.
UR - http://www.scopus.com/inward/record.url?scp=33847677546&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847677546&partnerID=8YFLogxK
U2 - 10.1063/1.2709956
DO - 10.1063/1.2709956
M3 - Article
AN - SCOPUS:33847677546
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
M1 - 093505
ER -