Alternative to pentacene patterning for organic thin film transistor

Kyung Ho Kim, Ki Wan Bong, Hong H. Lee

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A method is presented for patterning the pentacene active layer of organic thin film transistor. The method involves forming a metal pattern on a gate dielectric surface by transfer patterning, depositing pentacene over the whole surface, and then lifting off a bilayer of pentacene on the metal with a flat elastomeric mold. Compared with the method of direct pentacene transfer reported earlier [S. Y. Park, T. Kwon, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 18, 1861 (2006)], this alternative allows one to choose a surface for larger pentacene grain size and eliminates a high off-current associated with the direct transfer method. The rigid nature of a rigiflex mold allows the pentacene pattern size to be defined in submicrometer range and the flexible nature of rigiflex and elastomeric molds permits large area application.

Original languageEnglish
Article number093505
JournalApplied Physics Letters
Volume90
Issue number9
DOIs
Publication statusPublished - 2007 Mar 9
Externally publishedYes

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transistors
thin films
metals
grain size

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Alternative to pentacene patterning for organic thin film transistor. / Kim, Kyung Ho; Bong, Ki Wan; Lee, Hong H.

In: Applied Physics Letters, Vol. 90, No. 9, 093505, 09.03.2007.

Research output: Contribution to journalArticle

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