Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells

Joo Yong Song, Sungeun Park, Young Do Kim, Min Gu Kang, Sung Ju Tark, Soonwoo Kwon, Sewang Yoon, Donghwan Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO 2 layer (80 nm)/Si, and (3) SiN X layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 °C on bare Si and at ca. 690 °C on the SiO 2 layer. However, the SiO 2 did not withstand annealing at higher temperatures. The SiN X layer showed no Al-BSF region in samples annealed at up to 760 °C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization.

Original languageEnglish
Pages (from-to)699-703
Number of pages5
JournalMetals and Materials International
Volume18
Issue number4
DOIs
Publication statusPublished - 2012 Aug 1

Fingerprint

Silicon solar cells
Aluminum
Passivation
passivity
Solar cells
Fires
solar cells
Silicon
Annealing
Crystalline materials
aluminum
Screen printing
Lasers
Silicon wafers
Drilling
annealing
Metals
silicon
Temperature
Scanning electron microscopy

Keywords

  • Aluminum
  • Back surface field
  • Local contact
  • Rear passivation
  • Silicon nitride
  • Solar cell

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys
  • Mechanics of Materials
  • Materials Chemistry

Cite this

Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells. / Song, Joo Yong; Park, Sungeun; Kim, Young Do; Kang, Min Gu; Tark, Sung Ju; Kwon, Soonwoo; Yoon, Sewang; Kim, Donghwan.

In: Metals and Materials International, Vol. 18, No. 4, 01.08.2012, p. 699-703.

Research output: Contribution to journalArticle

Song, Joo Yong ; Park, Sungeun ; Kim, Young Do ; Kang, Min Gu ; Tark, Sung Ju ; Kwon, Soonwoo ; Yoon, Sewang ; Kim, Donghwan. / Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells. In: Metals and Materials International. 2012 ; Vol. 18, No. 4. pp. 699-703.
@article{139cecdb6cc94c71942aef468f31ad10,
title = "Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells",
abstract = "Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO 2 layer (80 nm)/Si, and (3) SiN X layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 °C on bare Si and at ca. 690 °C on the SiO 2 layer. However, the SiO 2 did not withstand annealing at higher temperatures. The SiN X layer showed no Al-BSF region in samples annealed at up to 760 °C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41{\%} without optimization.",
keywords = "Aluminum, Back surface field, Local contact, Rear passivation, Silicon nitride, Solar cell",
author = "Song, {Joo Yong} and Sungeun Park and Kim, {Young Do} and Kang, {Min Gu} and Tark, {Sung Ju} and Soonwoo Kwon and Sewang Yoon and Donghwan Kim",
year = "2012",
month = "8",
day = "1",
doi = "10.1007/s12540-012-4020-0",
language = "English",
volume = "18",
pages = "699--703",
journal = "Metals and Materials International",
issn = "1598-9623",
publisher = "Korean Institute of Metals and Materials",
number = "4",

}

TY - JOUR

T1 - Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells

AU - Song, Joo Yong

AU - Park, Sungeun

AU - Kim, Young Do

AU - Kang, Min Gu

AU - Tark, Sung Ju

AU - Kwon, Soonwoo

AU - Yoon, Sewang

AU - Kim, Donghwan

PY - 2012/8/1

Y1 - 2012/8/1

N2 - Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO 2 layer (80 nm)/Si, and (3) SiN X layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 °C on bare Si and at ca. 690 °C on the SiO 2 layer. However, the SiO 2 did not withstand annealing at higher temperatures. The SiN X layer showed no Al-BSF region in samples annealed at up to 760 °C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization.

AB - Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO 2 layer (80 nm)/Si, and (3) SiN X layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 °C on bare Si and at ca. 690 °C on the SiO 2 layer. However, the SiO 2 did not withstand annealing at higher temperatures. The SiN X layer showed no Al-BSF region in samples annealed at up to 760 °C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization.

KW - Aluminum

KW - Back surface field

KW - Local contact

KW - Rear passivation

KW - Silicon nitride

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=84869182217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869182217&partnerID=8YFLogxK

U2 - 10.1007/s12540-012-4020-0

DO - 10.1007/s12540-012-4020-0

M3 - Article

AN - SCOPUS:84869182217

VL - 18

SP - 699

EP - 703

JO - Metals and Materials International

JF - Metals and Materials International

SN - 1598-9623

IS - 4

ER -