Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells

Joo Yong Song, Sungeun Park, Young Do Kim, Min Gu Kang, Sung Ju Tark, Soonwoo Kwon, Sewang Yoon, Donghwan Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)


Aluminum penetration during dielectric layer annealing on silicon was studied for solar cell application. The thickness and uniformity of the aluminum-doped region was examined in variously annealed dielectric layers. Three types of silicon wafers were used with (1) bare Si, (2) SiO 2 layer (80 nm)/Si, and (3) SiN X layer (80 nm)/Si. Local metal contacts were made through laser-drilled holes, and annealing was tested at four different temperatures. Reactions between aluminum and silicon were observed by cross-sectional scanning electron microscopy. Reactions occurred at 660 °C on bare Si and at ca. 690 °C on the SiO 2 layer. However, the SiO 2 did not withstand annealing at higher temperatures. The SiN X layer showed no Al-BSF region in samples annealed at up to 760 °C, making it a suitable material for rear passivation layers in local contact Si solar cells. A Si solar cell fabricated by laser drilling and screen printing showed an efficiency of 12.41% without optimization.

Original languageEnglish
Pages (from-to)699-703
Number of pages5
JournalMetals and Materials International
Issue number4
Publication statusPublished - 2012 Aug 1



  • Aluminum
  • Back surface field
  • Local contact
  • Rear passivation
  • Silicon nitride
  • Solar cell

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys
  • Mechanics of Materials
  • Materials Chemistry

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