Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process

Jun Hong Jeon, Jin Young Choi, Won Woong Park, Sun Woo Moon, Sang Ho Lim, Seung Hee Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new plasma process, i.e., combination of PIII&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.

Original languageEnglish
Title of host publication2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages547-548
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of
Duration: 2011 Oct 182011 Oct 21

Other

Other2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
CountryKorea, Republic of
CityJeju
Period11/10/1811/10/21

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Jeon, J. H., Choi, J. Y., Park, W. W., Moon, S. W., Lim, S. H., & Han, S. H. (2011). Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process. In 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 (pp. 547-548). [6155290] https://doi.org/10.1109/NMDC.2011.6155290