Ambient air effects on electrical characteristics of GaP nanowire transistors

Donghun Kang; Ju Hue Ko; Eunju Bae; Jaewoong Hyun; Wanjun Park; Byoung Kye Kim; Ju Jin Kim; Cheoljin Lee

doi:10.1063/1.1818714

Ambient air effects on electrical characteristics of GaP nanowire transistors

Donghun Kang, Ju Hue Ko, Eunju Bae, Jaewoong Hyun, Wanjun Park, Byoung Kye Kim, Ju Jin Kim, Cheoljin Lee

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Gallium phosphide (GaP) nanowire transistors were fabricated in back-gated structure, and their electrical characteristics were measured systematically in both air and vacuum. The transistors turn on typically between -5 and -7 V in ambient air. However, a large threshold voltage (V_th) shift, ∼10 V, toward negative gate bias was observed in vacuum. After the transistors were exposed to air for 48 h, V_th returned to the similar value in ambient air, implying a reversible process. The rate of V_th shift slows down when they were exposed to N₂ in comparison with that of air. The shift of V_th is believed to be related to the charge transfer from the surface of GaP nanowire to the physically adsorbed OH or oxygen. In addition, the observed V_th shift from the GaP nanowire transistors can be explained by the conventional n-channel depletion mode metal-oxide-semiconductor field-effect transistor.

Original language	English
Article number	4
Pages (from-to)	7574-7577
Number of pages	4
Journal	Journal of Applied Physics
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.1818714
Publication status	Published - 2004 Dec 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Ambient air effects on electrical characteristics of GaP nanowire transistors",

abstract = "Gallium phosphide (GaP) nanowire transistors were fabricated in back-gated structure, and their electrical characteristics were measured systematically in both air and vacuum. The transistors turn on typically between -5 and -7 V in ambient air. However, a large threshold voltage (Vth) shift, ∼10 V, toward negative gate bias was observed in vacuum. After the transistors were exposed to air for 48 h, Vth returned to the similar value in ambient air, implying a reversible process. The rate of Vth shift slows down when they were exposed to N2 in comparison with that of air. The shift of Vth is believed to be related to the charge transfer from the surface of GaP nanowire to the physically adsorbed OH or oxygen. In addition, the observed Vth shift from the GaP nanowire transistors can be explained by the conventional n-channel depletion mode metal-oxide-semiconductor field-effect transistor.",

author = "Donghun Kang and Ko, {Ju Hue} and Eunju Bae and Jaewoong Hyun and Wanjun Park and Kim, {Byoung Kye} and Kim, {Ju Jin} and Cheoljin Lee",

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AU - Kang, Donghun

AU - Ko, Ju Hue

AU - Bae, Eunju

AU - Hyun, Jaewoong

AU - Park, Wanjun

AU - Kim, Byoung Kye

AU - Kim, Ju Jin

AU - Lee, Cheoljin

PY - 2004/12/15

Y1 - 2004/12/15

N2 - Gallium phosphide (GaP) nanowire transistors were fabricated in back-gated structure, and their electrical characteristics were measured systematically in both air and vacuum. The transistors turn on typically between -5 and -7 V in ambient air. However, a large threshold voltage (Vth) shift, ∼10 V, toward negative gate bias was observed in vacuum. After the transistors were exposed to air for 48 h, Vth returned to the similar value in ambient air, implying a reversible process. The rate of Vth shift slows down when they were exposed to N2 in comparison with that of air. The shift of Vth is believed to be related to the charge transfer from the surface of GaP nanowire to the physically adsorbed OH or oxygen. In addition, the observed Vth shift from the GaP nanowire transistors can be explained by the conventional n-channel depletion mode metal-oxide-semiconductor field-effect transistor.

AB - Gallium phosphide (GaP) nanowire transistors were fabricated in back-gated structure, and their electrical characteristics were measured systematically in both air and vacuum. The transistors turn on typically between -5 and -7 V in ambient air. However, a large threshold voltage (Vth) shift, ∼10 V, toward negative gate bias was observed in vacuum. After the transistors were exposed to air for 48 h, Vth returned to the similar value in ambient air, implying a reversible process. The rate of Vth shift slows down when they were exposed to N2 in comparison with that of air. The shift of Vth is believed to be related to the charge transfer from the surface of GaP nanowire to the physically adsorbed OH or oxygen. In addition, the observed Vth shift from the GaP nanowire transistors can be explained by the conventional n-channel depletion mode metal-oxide-semiconductor field-effect transistor.

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Ambient air effects on electrical characteristics of GaP nanowire transistors

Abstract

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