Amorphous InGaZnO thin film transistors with SiO 2/HfO 2 double-layer gate dielectric fabricated at low temperature

Ji Hong Kim, Jae Won Kim, Ji Hyung Roh, Kyung Ju Lee, Kang Min Do, Ju Hong Shin, Sang Mo Koo, Byung Moo Moon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO 2/50 nm-thick HfO 2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO 2/HfO 2 showed a higher capacitance of 35 nF/cm 2 and a lower leakage current density of 4.6 nA/cm 2 than 200 nm-thick SiO 2. The obtained saturation mobility (μ sat), threshold voltage (V th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm 2 V -1 s -1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.

Original languageEnglish
Pages (from-to)2923-2926
Number of pages4
JournalMaterials Research Bulletin
Volume47
Issue number10
DOIs
Publication statusPublished - 2012 Oct

Keywords

  • A. Amorphous materials
  • B. Laser deposition
  • D. Dielectric properties
  • D. Electrical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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