Amorphous InGaZnO thin film transistors with SiO 2/HfO 2 double-layer gate dielectric fabricated at low temperature

Ji Hong Kim, Jae Won Kim, Ji Hyung Roh, Kyung Ju Lee, Kang Min Do, Ju Hong Shin, Sang Mo Koo, Byung Moo Moon

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6 Citations (Scopus)

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