Amorphous Sr0.8Bi2.2Ta2O9 thin films for mim embedded capacitors

Min gyu Kang, Kwang hwan Cho, Chil hyoung Lee, Chong yun Kang, Seok jin Yoon, Min Gyu Kang, Sang sig Kim

Research output: Contribution to journalArticle

Abstract

Sr0.8Bi2.2Ta2O9 (SBT) thin films with thickness a ranging from 77 nm to 107 nm were deposited on Pt/Ti/SiO2/Si substrates by using a pulsed laser deposition method. During the deposition, the process substrate temperature was maintained at 350 °C for embedded capacitor applications. To form the top electrode of the MIM capacitor, we deposited Pt on the thin films by dc sputtering. The dielectric and the electrical properties of the SBT thin films were investigated in order to evaluate the performance for embedded MIM capacitors. A high capacitance density of 7.06 fF/μm2, along with a dissipation factor of 2.68%, was obtained at 1 MHz. The linear and the quadratic voltage coefficients of the capacitance were 590 ppm/V and 196 ppm/V2, respectively. These results demonstrate that the amorphous SBT thin films are good candidate materials for MIM embedded capacitor.

Original languageEnglish
Pages (from-to)1062-1065
Number of pages4
JournalJournal of the Korean Physical Society
Volume57
Issue number41
DOIs
Publication statusPublished - 2010 Oct 15

    Fingerprint

Keywords

  • Amorphous
  • MIM capacitor
  • Strontium bismuth tantalum oxide (SBT)
  • Thin film

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kang, M. G., Cho, K. H., Lee, C. H., Kang, C. Y., Yoon, S. J., Kang, M. G., & Kim, S. S. (2010). Amorphous Sr0.8Bi2.2Ta2O9 thin films for mim embedded capacitors. Journal of the Korean Physical Society, 57(41), 1062-1065. https://doi.org/10.3938/jkps.57.1062