An 18-32 GHz ultra wideband low-noise amplifier with a low variation of group delay

Bohee Seo; Sanggeun Jeon

doi:10.1109/MWSYM.2012.6259741

An 18-32 GHz ultra wideband low-noise amplifier with a low variation of group delay

Bohee Seo, Sanggeun Jeon

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper presents an 18-to-32-GHz ultra wideband (UWB) low-noise amplifier (LNA) in a bulk 0.13-μm CMOS technology. The LNA consisting of four stages exhibits a flat gain of 14.5 ± L.5 dB over the entire 18-to-32 GHz and a noise figure of 5.5 ± 0.4 dB at K-band (18 to 26.5 GHz). Moreover, the group delay variation is suppressed as low as 63.5 ± 6.5 ps over 21-26 GHz. The wideband characteristics of gain and group delay are achieved by a slope offset technique. The individual stages are designed, such that the transfer function of each stage shows its peak at different frequencies by adjusting the output resonance network. The pole-zero analysis is performed to validate the slope offset technique and to provide a practical design guideline. Due to the wideband performance of flat gain and group delay, the proposed LNA is suitable for UWB communication or radar applications that demand an instantaneously wide fractional bandwidth.

Original language	English
Title of host publication	IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs	https://doi.org/10.1109/MWSYM.2012.6259741
Publication status	Published - 2012
Event	2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada Duration: 2012 Jun 17 → 2012 Jun 22

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Other

Other	2012 IEEE MTT-S International Microwave Symposium, IMS 2012
Country	Canada
City	Montreal, QC
Period	12/6/17 → 12/6/22

Keywords

CMOS
Flat group delay
Low-noise amplifier
Ultra wideband

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2012.6259741

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Cite this

Seo, B., & Jeon, S. (2012). An 18-32 GHz ultra wideband low-noise amplifier with a low variation of group delay. In IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium [6259741] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2012.6259741

Seo, B & Jeon, S 2012, An 18-32 GHz ultra wideband low-noise amplifier with a low variation of group delay. in IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium., 6259741, IEEE MTT-S International Microwave Symposium Digest, 2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, QC, Canada, 12/6/17. https://doi.org/10.1109/MWSYM.2012.6259741

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abstract = "This paper presents an 18-to-32-GHz ultra wideband (UWB) low-noise amplifier (LNA) in a bulk 0.13-μm CMOS technology. The LNA consisting of four stages exhibits a flat gain of 14.5 ± L.5 dB over the entire 18-to-32 GHz and a noise figure of 5.5 ± 0.4 dB at K-band (18 to 26.5 GHz). Moreover, the group delay variation is suppressed as low as 63.5 ± 6.5 ps over 21-26 GHz. The wideband characteristics of gain and group delay are achieved by a slope offset technique. The individual stages are designed, such that the transfer function of each stage shows its peak at different frequencies by adjusting the output resonance network. The pole-zero analysis is performed to validate the slope offset technique and to provide a practical design guideline. Due to the wideband performance of flat gain and group delay, the proposed LNA is suitable for UWB communication or radar applications that demand an instantaneously wide fractional bandwidth.",

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N2 - This paper presents an 18-to-32-GHz ultra wideband (UWB) low-noise amplifier (LNA) in a bulk 0.13-μm CMOS technology. The LNA consisting of four stages exhibits a flat gain of 14.5 ± L.5 dB over the entire 18-to-32 GHz and a noise figure of 5.5 ± 0.4 dB at K-band (18 to 26.5 GHz). Moreover, the group delay variation is suppressed as low as 63.5 ± 6.5 ps over 21-26 GHz. The wideband characteristics of gain and group delay are achieved by a slope offset technique. The individual stages are designed, such that the transfer function of each stage shows its peak at different frequencies by adjusting the output resonance network. The pole-zero analysis is performed to validate the slope offset technique and to provide a practical design guideline. Due to the wideband performance of flat gain and group delay, the proposed LNA is suitable for UWB communication or radar applications that demand an instantaneously wide fractional bandwidth.

AB - This paper presents an 18-to-32-GHz ultra wideband (UWB) low-noise amplifier (LNA) in a bulk 0.13-μm CMOS technology. The LNA consisting of four stages exhibits a flat gain of 14.5 ± L.5 dB over the entire 18-to-32 GHz and a noise figure of 5.5 ± 0.4 dB at K-band (18 to 26.5 GHz). Moreover, the group delay variation is suppressed as low as 63.5 ± 6.5 ps over 21-26 GHz. The wideband characteristics of gain and group delay are achieved by a slope offset technique. The individual stages are designed, such that the transfer function of each stage shows its peak at different frequencies by adjusting the output resonance network. The pole-zero analysis is performed to validate the slope offset technique and to provide a practical design guideline. Due to the wideband performance of flat gain and group delay, the proposed LNA is suitable for UWB communication or radar applications that demand an instantaneously wide fractional bandwidth.

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