An 8F 2 MRAM Technology using Modified Metal Lines

J. H. Park, W. C. Jeong, H. J. Kim, J. H. Oh, Hyun Cheol Koo, G. H. Koh, G. T. Jeong, H. S. Jeong, Y. J. Jeong, S. L. Cho, J. E. Lee, Kinam Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


A novel 8F 2 cell structure for high density Magnetic Random Access Memory (MRAM) and its operation characteristics are proposed. In this new scheme, we formed bottom electrode contact (BEC) through twin metal lines (M1s) and magnetic tunnel junction (MTJ) was located just on BEC for the reduction of cell size. From the results of simulation and experiment, we have confirmed that the generated magnetic field in new scheme is more uniform than that in conventional scheme with the negligible reduction of writing field strength. We adopted self-aligned BEC process to prevent the electrical shorting between M1 and BEC. To avoid the electrical shorting and improve the magnetic properties of MTJs, chemical mechanical polishing (CMP) process was adopted before MTJ deposition. As a result, we confirmed the feasibility of high-density 1T1MTJ MRAM, composed of 8F 2 cells with the optimal MTJ characteristics.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Number of pages4
Publication statusPublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10


OtherIEEE International Electron Devices Meeting
CountryUnited States
CityWashington, DC


ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Park, J. H., Jeong, W. C., Kim, H. J., Oh, J. H., Koo, H. C., Koh, G. H., Jeong, G. T., Jeong, H. S., Jeong, Y. J., Cho, S. L., Lee, J. E., & Kim, K. (2003). An 8F 2 MRAM Technology using Modified Metal Lines In Technical Digest - International Electron Devices Meeting (pp. 827-830)