An 8F2 MRAM Technology using Modified Metal Lines

J. H. Park; W. C. Jeong; H. J. Kim; J. H. Oh; H. C. Koo; G. H. Koh; G. T. Jeong; H. S. Jeong; Y. J. Jeong; S. L. Cho; J. E. Lee; Kinam Kim

An 8F² MRAM Technology using Modified Metal Lines

J. H. Park, W. C. Jeong, H. J. Kim, J. H. Oh, H. C. Koo, G. H. Koh, G. T. Jeong, H. S. Jeong, Y. J. Jeong, S. L. Cho, J. E. Lee, Kinam Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Conference article

4 Citations (Scopus)

Abstract

A novel 8F² cell structure for high density Magnetic Random Access Memory (MRAM) and its operation characteristics are proposed. In this new scheme, we formed bottom electrode contact (BEC) through twin metal lines (M1s) and magnetic tunnel junction (MTJ) was located just on BEC for the reduction of cell size. From the results of simulation and experiment, we have confirmed that the generated magnetic field in new scheme is more uniform than that in conventional scheme with the negligible reduction of writing field strength. We adopted self-aligned BEC process to prevent the electrical shorting between M1 and BEC. To avoid the electrical shorting and improve the magnetic properties of MTJs, chemical mechanical polishing (CMP) process was adopted before MTJ deposition. As a result, we confirmed the feasibility of high-density 1T1MTJ MRAM, composed of 8F² cells with the optimal MTJ characteristics.

Original language	English
Pages (from-to)	827-830
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Park, J. H., Jeong, W. C., Kim, H. J., Oh, J. H., Koo, H. C., Koh, G. H., Jeong, G. T., Jeong, H. S., Jeong, Y. J., Cho, S. L., Lee, J. E., & Kim, K. (2003). An 8F² MRAM Technology using Modified Metal Lines. Technical Digest - International Electron Devices Meeting, 827-830.

@article{b708549a72cb4af98be09b2387d2521d,

title = "An 8F2 MRAM Technology using Modified Metal Lines",

abstract = "A novel 8F2 cell structure for high density Magnetic Random Access Memory (MRAM) and its operation characteristics are proposed. In this new scheme, we formed bottom electrode contact (BEC) through twin metal lines (M1s) and magnetic tunnel junction (MTJ) was located just on BEC for the reduction of cell size. From the results of simulation and experiment, we have confirmed that the generated magnetic field in new scheme is more uniform than that in conventional scheme with the negligible reduction of writing field strength. We adopted self-aligned BEC process to prevent the electrical shorting between M1 and BEC. To avoid the electrical shorting and improve the magnetic properties of MTJs, chemical mechanical polishing (CMP) process was adopted before MTJ deposition. As a result, we confirmed the feasibility of high-density 1T1MTJ MRAM, composed of 8F2 cells with the optimal MTJ characteristics.",

author = "Park, {J. H.} and Jeong, {W. C.} and Kim, {H. J.} and Oh, {J. H.} and Koo, {H. C.} and Koh, {G. H.} and Jeong, {G. T.} and Jeong, {H. S.} and Jeong, {Y. J.} and Cho, {S. L.} and Lee, {J. E.} and Kinam Kim",

year = "2003",

language = "English",

pages = "827--830",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - An 8F2 MRAM Technology using Modified Metal Lines

AU - Park, J. H.

AU - Jeong, W. C.

AU - Kim, H. J.

AU - Oh, J. H.

AU - Koo, H. C.

AU - Koh, G. H.

AU - Jeong, G. T.

AU - Jeong, H. S.

AU - Jeong, Y. J.

AU - Cho, S. L.

AU - Lee, J. E.

AU - Kim, Kinam

PY - 2003

Y1 - 2003

N2 - A novel 8F2 cell structure for high density Magnetic Random Access Memory (MRAM) and its operation characteristics are proposed. In this new scheme, we formed bottom electrode contact (BEC) through twin metal lines (M1s) and magnetic tunnel junction (MTJ) was located just on BEC for the reduction of cell size. From the results of simulation and experiment, we have confirmed that the generated magnetic field in new scheme is more uniform than that in conventional scheme with the negligible reduction of writing field strength. We adopted self-aligned BEC process to prevent the electrical shorting between M1 and BEC. To avoid the electrical shorting and improve the magnetic properties of MTJs, chemical mechanical polishing (CMP) process was adopted before MTJ deposition. As a result, we confirmed the feasibility of high-density 1T1MTJ MRAM, composed of 8F2 cells with the optimal MTJ characteristics.

AB - A novel 8F2 cell structure for high density Magnetic Random Access Memory (MRAM) and its operation characteristics are proposed. In this new scheme, we formed bottom electrode contact (BEC) through twin metal lines (M1s) and magnetic tunnel junction (MTJ) was located just on BEC for the reduction of cell size. From the results of simulation and experiment, we have confirmed that the generated magnetic field in new scheme is more uniform than that in conventional scheme with the negligible reduction of writing field strength. We adopted self-aligned BEC process to prevent the electrical shorting between M1 and BEC. To avoid the electrical shorting and improve the magnetic properties of MTJs, chemical mechanical polishing (CMP) process was adopted before MTJ deposition. As a result, we confirmed the feasibility of high-density 1T1MTJ MRAM, composed of 8F2 cells with the optimal MTJ characteristics.

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M3 - Conference article

AN - SCOPUS:17644433742

SP - 827

EP - 830

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -