TY - JOUR
T1 - An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields
AU - Min Lee, Jong
AU - Lim, S. H.
N1 - Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028163).
PY - 2011/11/1
Y1 - 2011/11/1
N2 - Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition.
AB - Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition.
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U2 - 10.1063/1.3658266
DO - 10.1063/1.3658266
M3 - Article
AN - SCOPUS:81355136139
VL - 110
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
M1 - 093910
ER -