Abstract
When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.
| Original language | Korean |
|---|---|
| Pages (from-to) | 305-309 |
| Number of pages | 5 |
| Journal | Korean Journal of Materials Research |
| Volume | 24 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
ASJC Scopus subject areas
- Materials Science(all)
Cite this
An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells. / Kim, Soo Min; Bae, Soohyun; Kim, Young Do; Park, Sungeun; Kang, Yoon Mook; Lee, Haeseok; Kim, Donghwan.
In: Korean Journal of Materials Research, Vol. 24, No. 6, 01.01.2014, p. 305-309.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells
AU - Kim, Soo Min
AU - Bae, Soohyun
AU - Kim, Young Do
AU - Park, Sungeun
AU - Kang, Yoon Mook
AU - Lee, Haeseok
AU - Kim, Donghwan
PY - 2014/1/1
Y1 - 2014/1/1
N2 - When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.
AB - When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.
KW - Cz-si
KW - Inverse internal quantum efficiency
KW - Light induced degradation
KW - Normalized defects concentration
UR - http://www.scopus.com/inward/record.url?scp=84908617249&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84908617249&partnerID=8YFLogxK
U2 - 10.3740/MRSK.2014.24.6.305
DO - 10.3740/MRSK.2014.24.6.305
M3 - Article
AN - SCOPUS:84908617249
VL - 24
SP - 305
EP - 309
JO - Korean Journal of Materials Research
JF - Korean Journal of Materials Research
SN - 1225-0562
IS - 6
ER -