An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells

Soo Min Kim, Soohyun Bae, Young Do Kim, Sungeun Park, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

Abstract

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.

Original languageKorean
Pages (from-to)305-309
Number of pages5
JournalKorean Journal of Materials Research
Volume24
Issue number6
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells. / Kim, Soo Min; Bae, Soohyun; Kim, Young Do; Park, Sungeun; Kang, Yoon Mook; Lee, Haeseok; Kim, Donghwan.

In: Korean Journal of Materials Research, Vol. 24, No. 6, 01.01.2014, p. 305-309.

Research output: Contribution to journalArticle

Kim, Soo Min ; Bae, Soohyun ; Kim, Young Do ; Park, Sungeun ; Kang, Yoon Mook ; Lee, Haeseok ; Kim, Donghwan. / An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells. In: Korean Journal of Materials Research. 2014 ; Vol. 24, No. 6. pp. 305-309.
@article{1f882ef4628c47c5be2891fef9c739e1,
title = "An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells",
abstract = "When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.",
keywords = "Cz-si, Inverse internal quantum efficiency, Light induced degradation, Normalized defects concentration",
author = "Kim, {Soo Min} and Soohyun Bae and Kim, {Young Do} and Sungeun Park and Kang, {Yoon Mook} and Haeseok Lee and Donghwan Kim",
year = "2014",
month = "1",
day = "1",
doi = "10.3740/MRSK.2014.24.6.305",
language = "Korean",
volume = "24",
pages = "305--309",
journal = "Korean Journal of Materials Research",
issn = "1225-0562",
publisher = "The Korea Federation of Science and Technology",
number = "6",

}

TY - JOUR

T1 - An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells

AU - Kim, Soo Min

AU - Bae, Soohyun

AU - Kim, Young Do

AU - Park, Sungeun

AU - Kang, Yoon Mook

AU - Lee, Haeseok

AU - Kim, Donghwan

PY - 2014/1/1

Y1 - 2014/1/1

N2 - When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.

AB - When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.

KW - Cz-si

KW - Inverse internal quantum efficiency

KW - Light induced degradation

KW - Normalized defects concentration

UR - http://www.scopus.com/inward/record.url?scp=84908617249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908617249&partnerID=8YFLogxK

U2 - 10.3740/MRSK.2014.24.6.305

DO - 10.3740/MRSK.2014.24.6.305

M3 - Article

VL - 24

SP - 305

EP - 309

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

SN - 1225-0562

IS - 6

ER -