An area-efficient, low-VDD, highly reliable multi-cell antifuse system fully operative in DRAMs

Jong Pil Son, Jin Ho Kim, Woo Song Ahn, Seung Uk Han, Satoru Yamada, Byung Sick Moon, Churoo Park, Hong Sun Hwang, Seong Jin Jang, Joo Sun Choi, Young Hyun Jun, Soo-Won Kim

Research output: Contribution to journalArticle

Abstract

A reliable antifuse scheme has been very hard to build, which has precluded its implementation in DRAM products. We devised a very reliable multi-cell structure to cope with the large process variation in the DRAM-cell-capacitor type antifuse system. The programming current did not rise above 564 μA even in the nine-cell case. The cumulative distribution of the successful rupture in the multi-cell structure could be curtailed dramatically to less than 15% of the single-cell's case and the recovery problem of programmed cells after the thermal stress (300°C) had disappeared. In addition, we also presented a Post-Package Repair (PPR) scheme that could be directly coupled to the external high-voltage power rail via an additional pin with small protection circuits, saving the chip area otherwise consumed by the internal pump circuitry. A 1 Gbit DDR SDRAMwas fabricated using Samsung's advanced 50 nm DRAM technology, successfully proving the feasibility of the proposed antifuse system implemented in it.

Original languageEnglish
Pages (from-to)1690-1697
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE94-C
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

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Keywords

  • Antifuse
  • DRAM
  • Post-package repair
  • Recovery
  • Repair

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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