An efficient off-chip impedance matching technique of L-band silicon integrated circuits

K. H. Kim, S. W. Hwang, Soo-Won Kim, Jinwoo Park, H. J. Chung, S. H. Yoon

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An efficient off-chip impedance matching technique of RF silicon IC's is presented. SPICE simulation of the chip including the package components such as lead frames, bonding wires, and pads is shown to be adequate enough for the construction of the matching networks and the S-parameter measurements of the inputs are not needed. Experimental results show that satisfactory off-chip impedance matching has been achieved using this technique. Simulation result of IF signal well describes measured time domain, and the measured input reflection coefficient (S 11) is shown to reach near the -25 dB point.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 4
Publication statusPublished - 1999 Dec 1

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impedance matching
ultrahigh frequencies
integrated circuits
chips
silicon
simulation
wire
reflectance

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

An efficient off-chip impedance matching technique of L-band silicon integrated circuits. / Kim, K. H.; Hwang, S. W.; Kim, Soo-Won; Park, Jinwoo; Chung, H. J.; Yoon, S. H.

In: Journal of the Korean Physical Society, Vol. 35, No. SUPPL. 4, 01.12.1999.

Research output: Contribution to journalArticle

@article{42654dd2214f4343a6bb1d0235a91696,
title = "An efficient off-chip impedance matching technique of L-band silicon integrated circuits",
abstract = "An efficient off-chip impedance matching technique of RF silicon IC's is presented. SPICE simulation of the chip including the package components such as lead frames, bonding wires, and pads is shown to be adequate enough for the construction of the matching networks and the S-parameter measurements of the inputs are not needed. Experimental results show that satisfactory off-chip impedance matching has been achieved using this technique. Simulation result of IF signal well describes measured time domain, and the measured input reflection coefficient (S 11) is shown to reach near the -25 dB point.",
author = "Kim, {K. H.} and Hwang, {S. W.} and Soo-Won Kim and Jinwoo Park and Chung, {H. J.} and Yoon, {S. H.}",
year = "1999",
month = "12",
day = "1",
language = "English",
volume = "35",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "SUPPL. 4",

}

TY - JOUR

T1 - An efficient off-chip impedance matching technique of L-band silicon integrated circuits

AU - Kim, K. H.

AU - Hwang, S. W.

AU - Kim, Soo-Won

AU - Park, Jinwoo

AU - Chung, H. J.

AU - Yoon, S. H.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - An efficient off-chip impedance matching technique of RF silicon IC's is presented. SPICE simulation of the chip including the package components such as lead frames, bonding wires, and pads is shown to be adequate enough for the construction of the matching networks and the S-parameter measurements of the inputs are not needed. Experimental results show that satisfactory off-chip impedance matching has been achieved using this technique. Simulation result of IF signal well describes measured time domain, and the measured input reflection coefficient (S 11) is shown to reach near the -25 dB point.

AB - An efficient off-chip impedance matching technique of RF silicon IC's is presented. SPICE simulation of the chip including the package components such as lead frames, bonding wires, and pads is shown to be adequate enough for the construction of the matching networks and the S-parameter measurements of the inputs are not needed. Experimental results show that satisfactory off-chip impedance matching has been achieved using this technique. Simulation result of IF signal well describes measured time domain, and the measured input reflection coefficient (S 11) is shown to reach near the -25 dB point.

UR - http://www.scopus.com/inward/record.url?scp=0033266528&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033266528&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0033266528

VL - 35

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - SUPPL. 4

ER -