An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact

Seung Geun Kim; Gwang Sik Kim; Seung Hwan Kim; Sun Woo Kim; June Park; Hyun Yong Yu

doi:10.1166/jnn.2017.14756

An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si_1-xGe_x films for non-alloyed ohmic contact

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Sun Woo Kim, June Park, Hyun Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si_1−xGe_x contact region by preventing penetration into the Si_1−xGe_x of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO₂/Si_1−xGe_x structure improve at the TiO₂ interlayer thickness of 0.5 nm for all kinds of Si_1−xGe_x film with various levels of germanium (Ge) concentration. The case of Si₀₇Ge₀₃ film, the specific contact resistivity of a Ti/TiO₂(0.5 nm)/Si₀₇Ge₀₃ structure is reduced 80-fold compared to that of a Ti/Si₀₇Ge₀₃ structure. The effect of the MIS structure has been well demonstrated on Si_1−xGe_x film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si_1−xGe_x complementary metal-oxide-semiconductor (CMOS) technology.

Original language	English
Pages (from-to)	7323-7326
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2017.14756
Publication status	Published - 2017 Oct

Keywords

Epitaxial Growth
Fermi-Level Pinning
Metal-Interlayer-Semiconductor
Silicon-Germanium
Source/Drain Contact
Specific Contact Resistivity

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1166/jnn.2017.14756

Cite this

@article{544d7e7b95b041748a12f60d8428e0d2,

title = "An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact",

abstract = "In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1−xGex contact region by preventing penetration into the Si1−xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1−xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1−xGex film with various levels of germanium (Ge) concentration. The case of Si07Ge03 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si07Ge03 structure is reduced 80-fold compared to that of a Ti/Si07Ge03 structure. The effect of the MIS structure has been well demonstrated on Si1−xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1−xGex complementary metal-oxide-semiconductor (CMOS) technology.",

keywords = "Epitaxial Growth, Fermi-Level Pinning, Metal-Interlayer-Semiconductor, Silicon-Germanium, Source/Drain Contact, Specific Contact Resistivity",

author = "Kim, {Seung Geun} and Kim, {Gwang Sik} and Kim, {Seung Hwan} and Kim, {Sun Woo} and June Park and Yu, {Hyun Yong}",

note = "Funding Information: This work was supported in part by the Technology Innovation Program within the Ministry of Trade, Industry and Energy, Korea, under Grant 10052804, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045490). Publisher Copyright: Copyright {\textcopyright} 2017 American Scientific Publishers All rights reserved",

year = "2017",

month = oct,

doi = "10.1166/jnn.2017.14756",

language = "English",

volume = "17",

pages = "7323--7326",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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T1 - An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact

AU - Kim, Seung Geun

AU - Kim, Gwang Sik

AU - Kim, Seung Hwan

AU - Kim, Sun Woo

AU - Park, June

AU - Yu, Hyun Yong

N1 - Funding Information: This work was supported in part by the Technology Innovation Program within the Ministry of Trade, Industry and Energy, Korea, under Grant 10052804, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045490). Publisher Copyright: Copyright © 2017 American Scientific Publishers All rights reserved

PY - 2017/10

Y1 - 2017/10

N2 - In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1−xGex contact region by preventing penetration into the Si1−xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1−xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1−xGex film with various levels of germanium (Ge) concentration. The case of Si07Ge03 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si07Ge03 structure is reduced 80-fold compared to that of a Ti/Si07Ge03 structure. The effect of the MIS structure has been well demonstrated on Si1−xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1−xGex complementary metal-oxide-semiconductor (CMOS) technology.

AB - In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1−xGex contact region by preventing penetration into the Si1−xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1−xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1−xGex film with various levels of germanium (Ge) concentration. The case of Si07Ge03 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si07Ge03 structure is reduced 80-fold compared to that of a Ti/Si07Ge03 structure. The effect of the MIS structure has been well demonstrated on Si1−xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1−xGex complementary metal-oxide-semiconductor (CMOS) technology.

KW - Epitaxial Growth

KW - Fermi-Level Pinning

KW - Metal-Interlayer-Semiconductor

KW - Silicon-Germanium

KW - Source/Drain Contact

KW - Specific Contact Resistivity

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U2 - 10.1166/jnn.2017.14756

DO - 10.1166/jnn.2017.14756

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SN - 1533-4880

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -