An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Sun Woo Kim, June Park, Hyun-Yong Yu

Research output: Contribution to journalArticle

Abstract

In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1−xGex contact region by preventing penetration into the Si1−xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1−xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1−xGex film with various levels of germanium (Ge) concentration. The case of Si07Ge03 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si07Ge03 structure is reduced 80-fold compared to that of a Ti/Si07Ge03 structure. The effect of the MIS structure has been well demonstrated on Si1−xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1−xGex complementary metal-oxide-semiconductor (CMOS) technology.

Original languageEnglish
Pages (from-to)7323-7326
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number10
DOIs
Publication statusPublished - 2017 Oct 1

Fingerprint

Semiconductors
Ohmic contacts
electric contacts
interlayers
Metals
Semiconductor materials
metals
Germanium
germanium
electrical resistivity
ultrahigh vacuum
metal surfaces
CMOS
penetration
electrical properties
vapor deposition
Ultrahigh vacuum
Silicon
current density
Vacuum

Keywords

  • Epitaxial Growth
  • Fermi-Level Pinning
  • Metal-Interlayer-Semiconductor
  • Silicon-Germanium
  • Source/Drain Contact
  • Specific Contact Resistivity

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact. / Kim, Seung Geun; Kim, Gwang Sik; Kim, Seung Hwan; Kim, Sun Woo; Park, June; Yu, Hyun-Yong.

In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 10, 01.10.2017, p. 7323-7326.

Research output: Contribution to journalArticle

Kim, Seung Geun ; Kim, Gwang Sik ; Kim, Seung Hwan ; Kim, Sun Woo ; Park, June ; Yu, Hyun-Yong. / An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact. In: Journal of Nanoscience and Nanotechnology. 2017 ; Vol. 17, No. 10. pp. 7323-7326.
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