An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Sun Woo Kim, June Park, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review


In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1−xGex contact region by preventing penetration into the Si1−xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1−xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1−xGex film with various levels of germanium (Ge) concentration. The case of Si07Ge03 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si07Ge03 structure is reduced 80-fold compared to that of a Ti/Si07Ge03 structure. The effect of the MIS structure has been well demonstrated on Si1−xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1−xGex complementary metal-oxide-semiconductor (CMOS) technology.

Original languageEnglish
Pages (from-to)7323-7326
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number10
Publication statusPublished - 2017 Oct


  • Epitaxial Growth
  • Fermi-Level Pinning
  • Metal-Interlayer-Semiconductor
  • Silicon-Germanium
  • Source/Drain Contact
  • Specific Contact Resistivity

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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