An electrical switching device controlled by a magnetic field-dependent impact ionization process

Jinseo Lee, Sungjung Joo, Taeyueb Kim, Kihyun Kim, Kungwon Rhie, Jinki Hong, Kyung Ho Shin

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.

Original languageEnglish
Article number253505
JournalApplied Physics Letters
Volume97
Issue number25
DOIs
Publication statusPublished - 2010 Dec 20
Externally publishedYes

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ionization
magnetic fields
thresholds
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

An electrical switching device controlled by a magnetic field-dependent impact ionization process. / Lee, Jinseo; Joo, Sungjung; Kim, Taeyueb; Kim, Kihyun; Rhie, Kungwon; Hong, Jinki; Shin, Kyung Ho.

In: Applied Physics Letters, Vol. 97, No. 25, 253505, 20.12.2010.

Research output: Contribution to journalArticle

Lee, Jinseo ; Joo, Sungjung ; Kim, Taeyueb ; Kim, Kihyun ; Rhie, Kungwon ; Hong, Jinki ; Shin, Kyung Ho. / An electrical switching device controlled by a magnetic field-dependent impact ionization process. In: Applied Physics Letters. 2010 ; Vol. 97, No. 25.
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