An electrical switching device controlled by a magnetic field-dependent impact ionization process

Jinseo Lee, Sungjung Joo, Taeyueb Kim, Ki Hyun Kim, Kungwon Rhie, Jinki Hong, Kyung Ho Shin

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.

Original languageEnglish
Article number253505
JournalApplied Physics Letters
Volume97
Issue number25
DOIs
Publication statusPublished - 2010 Dec 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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