An electrochemical route to MoS2 nanosheets for device applications

Xueqiu You; Na Liu; Cheol Jin Lee; James Jungho Pak

doi:10.1016/j.matlet.2014.01.052

An electrochemical route to MoS₂ nanosheets for device applications

Xueqiu You, Na Liu, Cheol Jin Lee, James Jungho Pak

School of Electrical Engineering

Research output: Contribution to journal › Article

24 Citations (Scopus)

Abstract

This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS₂ semiconducting nanosheets. During the exfoliation process, anionic SO₄ ^2- and OH^- ions intercalate into a bulk MoS₂ and they form gaseous SO₂ or O₂ gas bubbles which produce a separating force for MoS₂ nanosheets exfoliation. Monolayer or few layers of MoS₂ nanosheets were obtained on a SiO₂/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS₂ nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 10³, the field-effect mobility on SiO ₂ gate dielectrics was 2 cm²/(V s).

Original language	English
Pages (from-to)	31-35
Number of pages	5
Journal	Materials Letters
Volume	121
DOIs	https://doi.org/10.1016/j.matlet.2014.01.052
Publication status	Published - 2014 Apr 15

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Keywords

2-D material
Electrochemical exfoliation
Field-effect transistor
Molybdenum disulfide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

Cite this

You, X., Liu, N., Lee, C. J., & Pak, J. J. (2014). An electrochemical route to MoS₂ nanosheets for device applications. Materials Letters, 121, 31-35. https://doi.org/10.1016/j.matlet.2014.01.052

@article{e4a015b0e4da4de991ba69daab369d71,

title = "An electrochemical route to MoS2 nanosheets for device applications",

abstract = "This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO4 2- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).",

keywords = "2-D material, Electrochemical exfoliation, Field-effect transistor, Molybdenum disulfide",

author = "Xueqiu You and Na Liu and Lee, {Cheol Jin} and Pak, {James Jungho}",

year = "2014",

month = apr

day = "15",

doi = "10.1016/j.matlet.2014.01.052",

language = "English",

volume = "121",

pages = "31--35",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - An electrochemical route to MoS2 nanosheets for device applications

AU - You, Xueqiu

AU - Liu, Na

AU - Lee, Cheol Jin

AU - Pak, James Jungho

PY - 2014/4/15

Y1 - 2014/4/15

N2 - This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO4 2- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).

AB - This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO4 2- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).

KW - 2-D material

KW - Electrochemical exfoliation

KW - Field-effect transistor

KW - Molybdenum disulfide

UR - http://www.scopus.com/inward/record.url?scp=84894040528&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894040528&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2014.01.052

DO - 10.1016/j.matlet.2014.01.052

M3 - Article

AN - SCOPUS:84894040528

VL - 121

SP - 31

EP - 35

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -

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10.1016/j.matlet.2014.01.052