Abstract
This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO4 2- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).
| Original language | English |
|---|---|
| Pages (from-to) | 31-35 |
| Number of pages | 5 |
| Journal | Materials Letters |
| Volume | 121 |
| DOIs | |
| Publication status | Published - 2014 Apr 15 |
Fingerprint
Keywords
- 2-D material
- Electrochemical exfoliation
- Field-effect transistor
- Molybdenum disulfide
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
An electrochemical route to MoS2 nanosheets for device applications. / You, Xueqiu; Liu, Na; Lee, Cheol Jin; Pak, James Jungho.
In: Materials Letters, Vol. 121, 15.04.2014, p. 31-35.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An electrochemical route to MoS2 nanosheets for device applications
AU - You, Xueqiu
AU - Liu, Na
AU - Lee, Cheol Jin
AU - Pak, James Jungho
PY - 2014/4/15
Y1 - 2014/4/15
N2 - This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO4 2- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).
AB - This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO4 2- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).
KW - 2-D material
KW - Electrochemical exfoliation
KW - Field-effect transistor
KW - Molybdenum disulfide
UR - http://www.scopus.com/inward/record.url?scp=84894040528&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894040528&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2014.01.052
DO - 10.1016/j.matlet.2014.01.052
M3 - Article
AN - SCOPUS:84894040528
VL - 121
SP - 31
EP - 35
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
ER -