Abstract
This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).
Original language | English |
---|---|
Pages (from-to) | 31-35 |
Number of pages | 5 |
Journal | Materials Letters |
Volume | 121 |
DOIs | |
Publication status | Published - 2014 Apr 15 |
Keywords
- 2-D material
- Electrochemical exfoliation
- Field-effect transistor
- Molybdenum disulfide
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering