An electrochemical route to MoS2 nanosheets for device applications

Xueqiu You; Na Liu; Cheol Jin Lee; James Jungho Pak

doi:10.1016/j.matlet.2014.01.052

An electrochemical route to MoS₂ nanosheets for device applications

Xueqiu You, Na Liu, Cheol Jin Lee, James Jungho Pak

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS₂ semiconducting nanosheets. During the exfoliation process, anionic SO₄^2- and OH^- ions intercalate into a bulk MoS₂ and they form gaseous SO₂ or O₂ gas bubbles which produce a separating force for MoS₂ nanosheets exfoliation. Monolayer or few layers of MoS₂ nanosheets were obtained on a SiO₂/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS₂ nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 10³, the field-effect mobility on SiO ₂ gate dielectrics was 2 cm²/(V s).

Original language	English
Pages (from-to)	31-35
Number of pages	5
Journal	Materials Letters
Volume	121
DOIs	https://doi.org/10.1016/j.matlet.2014.01.052
Publication status	Published - 2014 Apr 15

Keywords

2-D material
Electrochemical exfoliation
Field-effect transistor
Molybdenum disulfide

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "An electrochemical route to MoS2 nanosheets for device applications",

abstract = "This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).",

keywords = "2-D material, Electrochemical exfoliation, Field-effect transistor, Molybdenum disulfide",

author = "Xueqiu You and Na Liu and Lee, {Cheol Jin} and Pak, {James Jungho}",

note = "Funding Information: This work was supported by Korea Ministry of Environment as Projects for Developing Eco-Innovation Technologies ( GT-11-G-02-001-1 ), National Research Foundation of Korea Grant funded by the Korean Government (Ministry of Education, Science and Technology) (No. K20903001812-11E0100-01700 ), and Seoul R&BD Program (No. 10920 ).",

year = "2014",

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doi = "10.1016/j.matlet.2014.01.052",

language = "English",

volume = "121",

pages = "31--35",

journal = "Materials Letters",

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AU - You, Xueqiu

AU - Liu, Na

AU - Lee, Cheol Jin

AU - Pak, James Jungho

N1 - Funding Information: This work was supported by Korea Ministry of Environment as Projects for Developing Eco-Innovation Technologies ( GT-11-G-02-001-1 ), National Research Foundation of Korea Grant funded by the Korean Government (Ministry of Education, Science and Technology) (No. K20903001812-11E0100-01700 ), and Seoul R&BD Program (No. 10920 ).

PY - 2014/4/15

Y1 - 2014/4/15

N2 - This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).

AB - This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).

KW - 2-D material

KW - Electrochemical exfoliation

KW - Field-effect transistor

KW - Molybdenum disulfide

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