An electrochemical route to MoS2 nanosheets for device applications

Xueqiu You, Na Liu, Cheol Jin Lee, James Jungho Pak

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO4 2- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).

Original languageEnglish
Pages (from-to)31-35
Number of pages5
JournalMaterials Letters
Volume121
DOIs
Publication statusPublished - 2014 Apr 15

Fingerprint

Nanosheets
field effect transistors
routes
Field effect transistors
bubbles
Gate dielectrics
gases
Monolayers
ions
Gases
Ions
Substrates

Keywords

  • 2-D material
  • Electrochemical exfoliation
  • Field-effect transistor
  • Molybdenum disulfide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

An electrochemical route to MoS2 nanosheets for device applications. / You, Xueqiu; Liu, Na; Lee, Cheol Jin; Pak, James Jungho.

In: Materials Letters, Vol. 121, 15.04.2014, p. 31-35.

Research output: Contribution to journalArticle

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