Abstract
This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).
| Original language | English |
|---|---|
| Pages (from-to) | 31-35 |
| Number of pages | 5 |
| Journal | Materials Letters |
| Volume | 121 |
| DOIs | |
| Publication status | Published - 2014 Apr 15 |
Keywords
- 2-D material
- Electrochemical exfoliation
- Field-effect transistor
- Molybdenum disulfide
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Cite this
You, X., Liu, N., Lee, C. J., & Pak, J. J. (2014). An electrochemical route to MoS2 nanosheets for device applications. Materials Letters, 121, 31-35. https://doi.org/10.1016/j.matlet.2014.01.052