An energy efficient VPP generator with fast ramp-up time for mobile DRAM

Kyu Young Kim; Yonghwan Kim; Doo Chan Lee; Yu Ri Kang; Hoonki Kim; Soo Won Kim; Jongsun Park

doi:10.1109/JSSC.2011.2128170

An energy efficient V_PP generator with fast ramp-up time for mobile DRAM

Kyu Young Kim, Yonghwan Kim, Doo Chan Lee, Yu Ri Kang, Hoonki Kim, Soo Won Kim, Jongsun Park

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

An energy efficient V_PP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional V_PP generator, the proposed V _PP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based V_PP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed V_PP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The V _PP generator chip's core occupies 0.6 mm² area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.

Original language	English
Article number	5767518
Pages (from-to)	1488-1494
Number of pages	7
Journal	IEEE Journal of Solid-State Circuits
Volume	46
Issue number	6
DOIs	https://doi.org/10.1109/JSSC.2011.2128170
Publication status	Published - 2011 Jun

Keywords

Charge pump
V generator
mobile DRAM
voltage controlled oscillator
voltage doubler

ASJC Scopus subject areas

Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/JSSC.2011.2128170

Cite this

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title = "An energy efficient VPP generator with fast ramp-up time for mobile DRAM",

abstract = "An energy efficient VPP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional VPP generator, the proposed V PP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based VPP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed VPP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The V PP generator chip's core occupies 0.6 mm2 area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.",

keywords = "Charge pump, V generator, mobile DRAM, voltage controlled oscillator, voltage doubler",

author = "Kim, {Kyu Young} and Yonghwan Kim and Lee, {Doo Chan} and Kang, {Yu Ri} and Hoonki Kim and Kim, {Soo Won} and Jongsun Park",

note = "Funding Information: Manuscript received April 17, 2010; revised October 02, 2010; accepted January 23, 2011. Date of current version May 25, 2011. This paper was approved by Associate Editor Sreedhar Natarajan. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. K20902001448-10E0100-03010), Nano IP/Soc Promotion Group of Seoul R&BD Program (10920), and Hynix Semiconductor Inc.",

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AU - Kim, Kyu Young

AU - Kim, Yonghwan

AU - Lee, Doo Chan

AU - Kang, Yu Ri

AU - Kim, Hoonki

AU - Kim, Soo Won

AU - Park, Jongsun

N1 - Funding Information: Manuscript received April 17, 2010; revised October 02, 2010; accepted January 23, 2011. Date of current version May 25, 2011. This paper was approved by Associate Editor Sreedhar Natarajan. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. K20902001448-10E0100-03010), Nano IP/Soc Promotion Group of Seoul R&BD Program (10920), and Hynix Semiconductor Inc.

PY - 2011/6

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N2 - An energy efficient VPP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional VPP generator, the proposed V PP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based VPP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed VPP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The V PP generator chip's core occupies 0.6 mm2 area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.

AB - An energy efficient VPP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional VPP generator, the proposed V PP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based VPP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed VPP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The V PP generator chip's core occupies 0.6 mm2 area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.

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