Abstract
An energy efficient VPP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional VPP generator, the proposed V PP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based VPP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed VPP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The V PP generator chip's core occupies 0.6 mm2 area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.
| Original language | English |
|---|---|
| Article number | 5767518 |
| Pages (from-to) | 1488-1494 |
| Number of pages | 7 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 46 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2011 Jun 1 |
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Keywords
- Charge pump
- mobile DRAM
- V generator
- voltage controlled oscillator
- voltage doubler
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
An energy efficient VPP generator with fast ramp-up time for mobile DRAM. / Kim, Kyu Young; Kim, Yonghwan; Lee, Doo Chan; Kang, Yu Ri; Kim, Hoonki; Kim, Soo-Won; Park, Jongsun.
In: IEEE Journal of Solid-State Circuits, Vol. 46, No. 6, 5767518, 01.06.2011, p. 1488-1494.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An energy efficient VPP generator with fast ramp-up time for mobile DRAM
AU - Kim, Kyu Young
AU - Kim, Yonghwan
AU - Lee, Doo Chan
AU - Kang, Yu Ri
AU - Kim, Hoonki
AU - Kim, Soo-Won
AU - Park, Jongsun
PY - 2011/6/1
Y1 - 2011/6/1
N2 - An energy efficient VPP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional VPP generator, the proposed V PP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based VPP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed VPP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The V PP generator chip's core occupies 0.6 mm2 area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.
AB - An energy efficient VPP generator with fast ramp-up time for mobile DRAM is presented in this paper. Instead of using a fixed pumping clock frequency as in the conventional VPP generator, the proposed V PP generator adopts a voltage-controlled oscillator (VCO) and uses variable pumping frequencies to improve the ramp-up time as well as energy efficiency. Numerical results show that the VCO based VPP generators achieve energy savings of up to 34% with 40% improvement on ramp-up time when compared to the conventional ring oscillator (RO) based design. Our proposed VPP generator, which uses a three-stage voltage doubler as a charge pump, was implemented and fabricated in CMOS 0.13 μm process. The V PP generator chip's core occupies 0.6 mm2 area and consumes 1162 nJ (average power of 47.8 mW during 24 μs ramp-up time) while generating 3.0 V output voltage with 1.0 nF load capacitor, 2.0 mA current load and 1.2 V supply voltage.
KW - Charge pump
KW - mobile DRAM
KW - V generator
KW - voltage controlled oscillator
KW - voltage doubler
UR - http://www.scopus.com/inward/record.url?scp=79957664355&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957664355&partnerID=8YFLogxK
U2 - 10.1109/JSSC.2011.2128170
DO - 10.1109/JSSC.2011.2128170
M3 - Article
AN - SCOPUS:79957664355
VL - 46
SP - 1488
EP - 1494
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
SN - 0018-9200
IS - 6
M1 - 5767518
ER -