An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer

Jong Seok Lee; Ho Hyun Shin; Han Sin Lee; Ey Goo Kang; Man Young Sung

doi:10.1109/IWPSD.2007.4472639

An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer

Jong Seok Lee, Ho Hyun Shin, Han Sin Lee, Ey Goo Kang, Man Young Sung

* Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A trench gate insulated gate bipolar transistor(IGBT) employing a shielding layer, which improves the breakdown voltage characteristic is proposed and verified by 2D numerical simulation. The shielding layer concept is proposed to alleviate the electric field of concentrated on the trench bottom corner. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.

Original language	English
Title of host publication	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages	799-802
Number of pages	4
DOIs	https://doi.org/10.1109/IWPSD.2007.4472639
Publication status	Published - 2007
Event	14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India Duration: 2007 Dec 16 → 2007 Dec 20

Publication series

Name	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Other

Other	14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/Territory	India
City	Mumbai
Period	07/12/16 → 07/12/20

Keywords

Breakdown voltage
Electric field
Insulated gate bipolar transistor
Shielding layer
Trench gate

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IWPSD.2007.4472639

Cite this

Lee, J. S., Shin, H. H., Lee, H. S., Kang, E. G., & Sung, M. Y. (2007). An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 799-802). [4472639] (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). https://doi.org/10.1109/IWPSD.2007.4472639

An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer. / Lee, Jong Seok; Shin, Ho Hyun; Lee, Han Sin et al.

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 799-802 4472639 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, JS, Shin, HH, Lee, HS, Kang, EG & Sung, MY 2007, An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer. in Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD., 4472639, Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, pp. 799-802, 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, India, 07/12/16. https://doi.org/10.1109/IWPSD.2007.4472639

Lee JS, Shin HH, Lee HS, Kang EG, Sung MY. An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 799-802. 4472639. (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). doi: 10.1109/IWPSD.2007.4472639

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An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer

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