An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer

Jong Seok Lee, Ho Hyun Shin, Han Sin Lee, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A trench gate insulated gate bipolar transistor(IGBT) employing a shielding layer, which improves the breakdown voltage characteristic is proposed and verified by 2D numerical simulation. The shielding layer concept is proposed to alleviate the electric field of concentrated on the trench bottom corner. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages799-802
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: 2007 Dec 162007 Dec 20

Other

Other14th International Workshop on the Physics of Semiconductor Devices, IWPSD
CountryIndia
CityMumbai
Period07/12/1607/12/20

Keywords

  • Breakdown voltage
  • Electric field
  • Insulated gate bipolar transistor
  • Shielding layer
  • Trench gate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lee, J. S., Shin, H. H., Lee, H. S., Kang, E. G., & Sung, M. Y. (2007). An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 799-802). [4472639] https://doi.org/10.1109/IWPSD.2007.4472639