TY - JOUR
T1 - An in-plane WSe2p-n homojunction two-dimensional diode by laser-induced doping
AU - Yang, Sujeong
AU - Lee, Geonyeop
AU - Kim, Janghyuk
AU - Yang, Seunghoon
AU - Lee, Chul Ho
AU - Kim, Jihyun
N1 - Funding Information:
This research was supported by the National Research Foundation of Korea (2018R1D1A1A09083917) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (20172010104830). C.-H. L. acknowledges the support from the KU-KIST school project.
Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2020/7/7
Y1 - 2020/7/7
N2 - Conventional doping schemes of Si microelectronics are inadequate for atomic-thickness two-dimensional (2D) semiconductors, which makes it challenging to construct 2D p-n homojunctions. Herein, a UV laser-assisted doping method with addressability is proposed for seamlessly building a 2D WSe2 p-n homojunction. WSe2 with ambipolar transport properties was exposed to a focused UV laser to form WOx in a self-limiting and area-selective process that induces hole doping in the underlying WSe2via electron transfer. Different electrical behaviors, ranging from p-p to p-n in-plane homojunctions, were observed between the as-exfoliated (ambipolar) region and the UV laser-treated (p-doped) region, under the electrostatic modulation of the back-gate bias (VBG), resulting in the multi-state rectification ratios of 895 (positive VBG) and ∼4 (negative VBG). The evolution of the depletion region in the WSe2 in-plane homojunction was analyzed at different VBG using the scanning photocurrent mapping approach, yielding a high photocurrent of 1.8 nA for positive VBG, owing to the development of the p-n junction. Finally, a WSe2-based 2D homogeneous complementary inverter is demonstrated with a voltage gain of 1.8, thereby paving the way for next-generation atomic-thickness circuitry.
AB - Conventional doping schemes of Si microelectronics are inadequate for atomic-thickness two-dimensional (2D) semiconductors, which makes it challenging to construct 2D p-n homojunctions. Herein, a UV laser-assisted doping method with addressability is proposed for seamlessly building a 2D WSe2 p-n homojunction. WSe2 with ambipolar transport properties was exposed to a focused UV laser to form WOx in a self-limiting and area-selective process that induces hole doping in the underlying WSe2via electron transfer. Different electrical behaviors, ranging from p-p to p-n in-plane homojunctions, were observed between the as-exfoliated (ambipolar) region and the UV laser-treated (p-doped) region, under the electrostatic modulation of the back-gate bias (VBG), resulting in the multi-state rectification ratios of 895 (positive VBG) and ∼4 (negative VBG). The evolution of the depletion region in the WSe2 in-plane homojunction was analyzed at different VBG using the scanning photocurrent mapping approach, yielding a high photocurrent of 1.8 nA for positive VBG, owing to the development of the p-n junction. Finally, a WSe2-based 2D homogeneous complementary inverter is demonstrated with a voltage gain of 1.8, thereby paving the way for next-generation atomic-thickness circuitry.
UR - http://www.scopus.com/inward/record.url?scp=85087697978&partnerID=8YFLogxK
U2 - 10.1039/d0tc01790f
DO - 10.1039/d0tc01790f
M3 - Article
AN - SCOPUS:85087697978
VL - 8
SP - 8393
EP - 8398
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 25
ER -