An investigation of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy

Jichai Jeong, M. A. Shahid, J. C. Lee, T. E. Schlesinger, A. G. Milnes

Research output: Contribution to journalArticle

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Abstract

Photoluminescence (PL) and transmission electron microscopy have been used to study strained InxGa1-xAs/GaAs (x=0.24-0.28) quantum wells (QWs) grown by molecular-beam epitaxy. The three QWs grown without growth interruptions produce high intensity PL peaks of narrow full width at half-maximum (2.9 meV). On the other hand, the PL peaks in the QWs grown with 30-s interruptions are relatively broad, less symmetric, and show lower PL intensities, compared with the noninterrupted QWs. Our results show that high-quality strained InxGa1-xAs/GaAs QWs can be grown without growth interruptions.

Original languageEnglish
Pages (from-to)5464-5468
Number of pages5
JournalJournal of Applied Physics
Volume63
Issue number11
DOIs
Publication statusPublished - 1988 Dec 1
Externally publishedYes

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molecular beam epitaxy
quantum wells
interruption
photoluminescence
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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An investigation of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy. / Jeong, Jichai; Shahid, M. A.; Lee, J. C.; Schlesinger, T. E.; Milnes, A. G.

In: Journal of Applied Physics, Vol. 63, No. 11, 01.12.1988, p. 5464-5468.

Research output: Contribution to journalArticle

Jeong, Jichai ; Shahid, M. A. ; Lee, J. C. ; Schlesinger, T. E. ; Milnes, A. G. / An investigation of InxGa1-xAs/GaAs quantum wells grown by molecular-beam epitaxy. In: Journal of Applied Physics. 1988 ; Vol. 63, No. 11. pp. 5464-5468.
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