Photoluminescence (PL) and transmission electron microscopy have been used to study strained InxGa1-xAs/GaAs (x=0.24-0.28) quantum wells (QWs) grown by molecular-beam epitaxy. The three QWs grown without growth interruptions produce high intensity PL peaks of narrow full width at half-maximum (2.9 meV). On the other hand, the PL peaks in the QWs grown with 30-s interruptions are relatively broad, less symmetric, and show lower PL intensities, compared with the noninterrupted QWs. Our results show that high-quality strained InxGa1-xAs/GaAs QWs can be grown without growth interruptions.
ASJC Scopus subject areas
- Physics and Astronomy(all)