An Investigation of the Damage Mechanisms in Impact Ionization-Induced "Mixed-Mode" Reliability Stressing of Scaled SiGe HBTs

Chendong Zhu, Qingqing Liang, Ragad Al-Huq, John D. Cressler, Alvin Joseph, Jarle Johansen, Tianbing Chen, Guofu Niu, Greg Freeman, Jae Sung Rieh, David Ahlgren

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

A robust, time-dependent stress methodology for investigating "mixed-mode" (simultaneous high JC and high V CB) reliability degradation in advanced SiGe HBTs is introduced. We present comprehensive stress data on scaled 120 GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also employ calibrated MEDICI simulations using the hot carrier injection current technique to better understand the damage mechanisms, and conclude by assessing the impact of mixed-mode stress in aggressively scaled 200 GHz SiGe HBTs.

Original languageEnglish
Pages (from-to)185-188
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Zhu, C., Liang, Q., Al-Huq, R., Cressler, J. D., Joseph, A., Johansen, J., Chen, T., Niu, G., Freeman, G., Rieh, J. S., & Ahlgren, D. (2003). An Investigation of the Damage Mechanisms in Impact Ionization-Induced "Mixed-Mode" Reliability Stressing of Scaled SiGe HBTs. Technical Digest - International Electron Devices Meeting, 185-188.