An X-band MESFET grid oscillator with gate feedback

Robert M. Weikle, Moonil Kim, Jonathan B. Hacker, David B. Rutledge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A design for a quasi-optical MESFET power-combining array that utilizes gate feedback is presented. This circuit is different from previous MESFET grids that utilized packaged devices and source feedback to produce an oscillator at 5 GHz. The present configuration allows the drain and source leads to couple directly to the radiated field. Simulations indicate that this configuration can be used to build a high-frequency oscillator. A transmission-line model for the grid is presented and used to design a 25-element grid for operation at 10 GHz. Measurements show that the grid delivers an effective radiated power of 2.4 W at 10.9 GHz.

Original languageEnglish
Title of host publication1991 Digest
PublisherPubl by IEEE
Pages134-137
Number of pages4
ISBN (Print)0780301447
Publication statusPublished - 1991
EventAntennas and Propagation Society Symposium - London, Ont, Can
Duration: 1991 Jun 241991 Jun 28

Publication series

NameAP-S International Symposium (Digest) (IEEE Antennas and Propagation Society)
Volume1
ISSN (Print)0272-4693

Other

OtherAntennas and Propagation Society Symposium
CityLondon, Ont, Can
Period91/6/2491/6/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Weikle, R. M., Kim, M., Hacker, J. B., & Rutledge, D. B. (1991). An X-band MESFET grid oscillator with gate feedback. In 1991 Digest (pp. 134-137). (AP-S International Symposium (Digest) (IEEE Antennas and Propagation Society); Vol. 1). Publ by IEEE.