TY - JOUR
T1 - Analysis and simulation of reddish overshoot in active matrix organic light-emitting diode display with varying p-doped hole transport layer concentrations
AU - Lee, Jung Min
AU - Kang, Chang Heon
AU - Yoo, Juhn Suk
AU - Hwang, Han Wook
AU - Hong, Soon kwang
AU - Ha, Yong Min
AU - Ju, Byeong Kwon
N1 - Funding Information:
This research was carried out at the Centre de Recherche en Informatique de Montreal and was supported by the Natural Sciences and Engineering Council of Canada under grant No. A2439. The donation of a workstation from the Hewlett Packard Research Laboratories (Palo Alto, California) is acknowledged. Yoshua Bengio implemented the MLN algorithms. Regis Cardin implemented a fast version of the algorithm for extracting spectral lines.
Publisher Copyright:
© 2021
PY - 2021/12
Y1 - 2021/12
N2 - A typical organic light-emitting diode (OLED) display has common organic layers between adjacent pixels, which ensure ease of manufacturing process and efficiency in operation. The p-doped hole transport layer (p-HTL) has low electrical resistivity, which results in a high efficiency OLED. However, the low resistivity results in various side effects, including color crosstalk and overshoot, mainly due to lateral leakage current flowing through this layer. Furthermore, virtual reality and augmented reality devices that require extremely high pixels per inch (PPI) and superior image quality are very sensitive to lateral leakage current. In this study, we propose a passive driving panel based on RGB top emission to efficiently measure and model the lateral leakage current characteristics according to the p-HTL concentration. In addition, we constructed a 1.5-inch active matrix organic light-emitting diode panel based on the n-type low-temperature polycrystalline silicon 4T2C pixel circuit. Subsequently, we quantitatively analyzed the reddish overshoot phenomenon during the black to white image transition. This effect was reduced at p-HTL concentrations under 1%. Finally, we analyzed the overshoot mechanism through SPICE simulations and realized the optimal lateral resistance value of the common organic layer for each PPI.
AB - A typical organic light-emitting diode (OLED) display has common organic layers between adjacent pixels, which ensure ease of manufacturing process and efficiency in operation. The p-doped hole transport layer (p-HTL) has low electrical resistivity, which results in a high efficiency OLED. However, the low resistivity results in various side effects, including color crosstalk and overshoot, mainly due to lateral leakage current flowing through this layer. Furthermore, virtual reality and augmented reality devices that require extremely high pixels per inch (PPI) and superior image quality are very sensitive to lateral leakage current. In this study, we propose a passive driving panel based on RGB top emission to efficiently measure and model the lateral leakage current characteristics according to the p-HTL concentration. In addition, we constructed a 1.5-inch active matrix organic light-emitting diode panel based on the n-type low-temperature polycrystalline silicon 4T2C pixel circuit. Subsequently, we quantitatively analyzed the reddish overshoot phenomenon during the black to white image transition. This effect was reduced at p-HTL concentrations under 1%. Finally, we analyzed the overshoot mechanism through SPICE simulations and realized the optimal lateral resistance value of the common organic layer for each PPI.
KW - Active matrix organic light-emitting diode
KW - Lateral leakage current
KW - Overshoot
KW - SPICE simulation
KW - p-doped hole transport layer
UR - http://www.scopus.com/inward/record.url?scp=85115805993&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2021.106328
DO - 10.1016/j.orgel.2021.106328
M3 - Article
AN - SCOPUS:85115805993
VL - 99
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
M1 - 106328
ER -