Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells

Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Haeseok Lee, Taishi Sumita, Mitsuru Imaizumi, Tatsuya Takamoto, Takaaki Agui, Minoru Kaneiwa, Kunio Kamimura, Takeshi Ohshima, Hisayoshi Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP subcells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages1789-1792
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume2

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

Fingerprint

Solar cells
Doping (additives)
Radiation
Proton irradiation
Degradation
gallium arsenide

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Yamaguchi, M., Ekins-Daukes, N. J., Lee, H., Sumita, T., Imaizumi, M., Takamoto, T., ... Itoh, H. (2007). Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1789-1792). [4060004] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). https://doi.org/10.1109/WCPEC.2006.279838

Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. / Yamaguchi, Masafumi; Ekins-Daukes, Nicholas J.; Lee, Haeseok; Sumita, Taishi; Imaizumi, Mitsuru; Takamoto, Tatsuya; Agui, Takaaki; Kaneiwa, Minoru; Kamimura, Kunio; Ohshima, Takeshi; Itoh, Hisayoshi.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 1789-1792 4060004 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamaguchi, M, Ekins-Daukes, NJ, Lee, H, Sumita, T, Imaizumi, M, Takamoto, T, Agui, T, Kaneiwa, M, Kamimura, K, Ohshima, T & Itoh, H 2007, Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4060004, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, pp. 1789-1792, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279838
Yamaguchi M, Ekins-Daukes NJ, Lee H, Sumita T, Imaizumi M, Takamoto T et al. Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 1789-1792. 4060004. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279838
Yamaguchi, Masafumi ; Ekins-Daukes, Nicholas J. ; Lee, Haeseok ; Sumita, Taishi ; Imaizumi, Mitsuru ; Takamoto, Tatsuya ; Agui, Takaaki ; Kaneiwa, Minoru ; Kamimura, Kunio ; Ohshima, Takeshi ; Itoh, Hisayoshi. / Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. pp. 1789-1792 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).
@inproceedings{26e70b6ac2b04057a4b0d63b521a9fb7,
title = "Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells",
abstract = "The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP subcells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile.",
author = "Masafumi Yamaguchi and Ekins-Daukes, {Nicholas J.} and Haeseok Lee and Taishi Sumita and Mitsuru Imaizumi and Tatsuya Takamoto and Takaaki Agui and Minoru Kaneiwa and Kunio Kamimura and Takeshi Ohshima and Hisayoshi Itoh",
year = "2007",
month = "12",
day = "1",
doi = "10.1109/WCPEC.2006.279838",
language = "English",
isbn = "1424400163",
series = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",
pages = "1789--1792",
booktitle = "Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4",

}

TY - GEN

T1 - Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells

AU - Yamaguchi, Masafumi

AU - Ekins-Daukes, Nicholas J.

AU - Lee, Haeseok

AU - Sumita, Taishi

AU - Imaizumi, Mitsuru

AU - Takamoto, Tatsuya

AU - Agui, Takaaki

AU - Kaneiwa, Minoru

AU - Kamimura, Kunio

AU - Ohshima, Takeshi

AU - Itoh, Hisayoshi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP subcells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile.

AB - The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP subcells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile.

UR - http://www.scopus.com/inward/record.url?scp=41749125428&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41749125428&partnerID=8YFLogxK

U2 - 10.1109/WCPEC.2006.279838

DO - 10.1109/WCPEC.2006.279838

M3 - Conference contribution

AN - SCOPUS:41749125428

SN - 1424400163

SN - 9781424400164

T3 - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

SP - 1789

EP - 1792

BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

ER -