Analysis of aluminum back surface field at different wafer specifications in crystalline silicon solar cells

Sungeun Park, Hyomin Park, Yoon Mook Kang, Haeseok Lee, Donghwan Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality.

Original languageEnglish
Pages (from-to)1062-1068
Number of pages7
JournalCurrent Applied Physics
Volume16
Issue number9
DOIs
Publication statusPublished - 2016 Sep 1

Fingerprint

Silicon solar cells
Ingots
Aluminum
specifications
solar cells
wafers
Crystalline materials
aluminum
Specifications
ingots
electrical resistivity
Degradation
Crucibles
Solar cells
degradation
Doping (additives)
crucibles
causes
coefficients

Keywords

  • Al back contact
  • Metallization
  • Screen printing
  • Solar cells
  • Wafer resistivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Analysis of aluminum back surface field at different wafer specifications in crystalline silicon solar cells. / Park, Sungeun; Park, Hyomin; Kang, Yoon Mook; Lee, Haeseok; Kim, Donghwan.

In: Current Applied Physics, Vol. 16, No. 9, 01.09.2016, p. 1062-1068.

Research output: Contribution to journalArticle

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