Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor

Keosung Park, Seong Bin Kim, Sinsu Kyoung, Jong Won Choi, Soon Moon Jung, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photo diode (PD) well potential of 4-Tr CMOS image sensor (CIS) is changed according to the axial direction of off-axis wafer slicing which minimizes the channeling effect of ion implantation process. Channeling causes an incomplete charge transfer in the PD, and then results in the loss of PD well capacity eventually. In this paper, the effect of the axial direction of wafer slicing on the PD well potential profile is simulated with TCAD tool and the simulation result is examined through CMOS process actually. Furthermore, we show a way to compensate the change of effective tilt angle during the ion implantation process for creating N-type region in PD.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479932962
DOIs
Publication statusPublished - 2014 Jan 23
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 2014 Oct 282014 Oct 31

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period14/10/2814/10/31

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

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