Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

Koteswara Rao Peta, Byung Guon Park, Sang Tae Lee, Moon Deock Kim, Jae Eung Oh, Tae Geun Kim, V. Rajagopal Reddy

Research output: Contribution to journalArticle

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Abstract

Electrical and deep level defects have been investigated in GaN Schottky barrier diode (SBD) in the temperature ranging from 125 K to 425 K. The study was carried out by combined current density-voltage (J-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) characterization techniques. It is found that the ideality factor n of the diode decreases and the corresponding Schottky barrier height (SBH) increases with increasing temperature, which indicates the barrier in-homogeneity at metal/semiconductor interface. Thermionic emission with Gaussian distribution of SBHs is thought to be responsible for the electrical behavior of the diode over the temperature region. The possible explanation for this discrepancy in the estimated SBHs from J-V and C-V is presented. The DLTS measurement has revealed two deep level traps in GaN with activation energies Ec - 0.23 eV and Ec - 0.45 eV having different capture cross-sections. In addition, we observed that the reverse leakage current in GaN SBD above 275 K is due to Frenkel-Poole emission (FPE). The estimated emission barrier height by FPE model is about ∼0.25 eV. Hence, the reverse leakage current is due to the emission of electrons from the trap state near the metal-semiconductor interface into a continuum of states, associated with conductive dislocations.

Original languageEnglish
Pages (from-to)603-608
Number of pages6
JournalThin Solid Films
Volume534
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

Schottky barrier diodes
Schottky diodes
Electric properties
Deep level transient spectroscopy
electrical properties
Leakage currents
Defects
defects
Diodes
Electric potential
Capacitance
Metals
Semiconductor materials
Thermionic emission
electric potential
leakage
capacitance
diodes
Gaussian distribution
traps

Keywords

  • Deep level defects
  • III-V semiconductors
  • Leakage current
  • Schottky barrier diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode. / Peta, Koteswara Rao; Park, Byung Guon; Lee, Sang Tae; Kim, Moon Deock; Oh, Jae Eung; Kim, Tae Geun; Reddy, V. Rajagopal.

In: Thin Solid Films, Vol. 534, 01.05.2013, p. 603-608.

Research output: Contribution to journalArticle

Peta, Koteswara Rao ; Park, Byung Guon ; Lee, Sang Tae ; Kim, Moon Deock ; Oh, Jae Eung ; Kim, Tae Geun ; Reddy, V. Rajagopal. / Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode. In: Thin Solid Films. 2013 ; Vol. 534. pp. 603-608.
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AB - Electrical and deep level defects have been investigated in GaN Schottky barrier diode (SBD) in the temperature ranging from 125 K to 425 K. The study was carried out by combined current density-voltage (J-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) characterization techniques. It is found that the ideality factor n of the diode decreases and the corresponding Schottky barrier height (SBH) increases with increasing temperature, which indicates the barrier in-homogeneity at metal/semiconductor interface. Thermionic emission with Gaussian distribution of SBHs is thought to be responsible for the electrical behavior of the diode over the temperature region. The possible explanation for this discrepancy in the estimated SBHs from J-V and C-V is presented. The DLTS measurement has revealed two deep level traps in GaN with activation energies Ec - 0.23 eV and Ec - 0.45 eV having different capture cross-sections. In addition, we observed that the reverse leakage current in GaN SBD above 275 K is due to Frenkel-Poole emission (FPE). The estimated emission barrier height by FPE model is about ∼0.25 eV. Hence, the reverse leakage current is due to the emission of electrons from the trap state near the metal-semiconductor interface into a continuum of states, associated with conductive dislocations.

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