Analysis of electronic carrier traps in Cr-SrTiO 3-based charge trap flash memory devices

Yujeong Seo, Min Yeong Song, Soyun Park, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated the deep-level traps formed in Cr-SrTiO 3/Si 3N 4/SiO 2 structures deposited on n-type Si by deep-level transient spectroscopy (DLTS). Three electron traps, with averaged activation energies of 0.24, 0.28, and 0.53 eV, were observed below the conduction band minimum of Si. Different behaviors in the dependence of DLTS on both filling bias and pulse confirm that the traps originate as the Si 3N 4 bulk trap, the Si 3N 4/SiO 2 interfacial trap, and the Si/SiO 2 interfacial trap. We also demonstrate that a specific point defect is the source of memory behavior in Cr-SrTiO 3-based fusion-type charge trap flash (CTF) memory devices.

Original languageEnglish
Article number243501
JournalApplied Physics Letters
Volume100
Issue number24
DOIs
Publication statusPublished - 2012 Jun 11

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flash
traps
electronics
point defects
spectroscopy
conduction bands
fusion
activation energy
pulses
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Analysis of electronic carrier traps in Cr-SrTiO 3-based charge trap flash memory devices. / Seo, Yujeong; Yeong Song, Min; Park, Soyun; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 100, No. 24, 243501, 11.06.2012.

Research output: Contribution to journalArticle

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