Analysis of laser-induced damage during laser ablation process using picosecond pulse width laser to fabricate highly efficient PERC cells

Myungsu Kim, Donghwan Kim, Dongseop Kim, Yoon Mook Kang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A highly efficient passivated emitter and rear cell(PERC) was fabricated using a picosecond (ps) pulse width laser ablation system. To evaluate the applicability of the laser ablation process to remove dielectric layers, the laser-induced damage was thoroughly analyzed using TEM and Raman spectroscopy. At the optimized laser intensity, passivation layers such as SiNx and Al2O3 were well ablated and laser damage was suppressed. In this case, only a thin layer of amorphous silicon of 30 Å in thickness was formed but recrystallized domains or dislocations were not observed underneath the processed region. At excessive irradiation powers, the dislocation density significantly increased under the ablated spot. As a result, as the laser irradiation energy increased from 3.2W to 9.6W, the cell efficiency linearly decreased from 19.35% to 19.04%.

Original languageEnglish
Pages (from-to)101-106
Number of pages6
JournalSolar Energy
Volume108
DOIs
Publication statusPublished - 2014 Jan 1

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Laser damage
Laser ablation
Laser pulses
Lasers
Laser beam effects
Amorphous silicon
Passivation
Raman spectroscopy
Irradiation
Transmission electron microscopy

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Analysis of laser-induced damage during laser ablation process using picosecond pulse width laser to fabricate highly efficient PERC cells. / Kim, Myungsu; Kim, Donghwan; Kim, Dongseop; Kang, Yoon Mook.

In: Solar Energy, Vol. 108, 01.01.2014, p. 101-106.

Research output: Contribution to journalArticle

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