TY - JOUR
T1 - Analysis of Parameters Affecting the Surface Roughness in Sapphire Wafer Polishing Using Nanocrystalline–Microcrystalline Multilayer Diamond CVD Pellets
AU - Yun, Joong Cheul
AU - Lee, Eung seok
AU - Lee, Choong hyun
AU - Lim, Young kyun
AU - Lim, Dae Soon
N1 - Funding Information:
Acknowledgements This work was supported by the Technology Innovation Program (10052882, Development of High Throughput Wafering Equipment for the Manufacturing of Transparent Sapphire Substrate with Total Kerf Loss of 300 µm or Less) funded by the Ministry of Trade, Industry and Energy (MI, Korea).
PY - 2019/6/1
Y1 - 2019/6/1
N2 - To reduce the processing cost and to polish high hardness substrates, a change from the currently used slurry process to the process using fixed abrasive grain is required. Therefore, studying the fixed abrasive tool to improve yield and process stability is important. In this study, a chemical vapor deposition (CVD) diamond pellet with an artificially controlled contact area was applied to replace the slurry polishing process. The CVD diamond pellets were prepared by depositing a microcrystalline diamond on silicon nitride ceramic substrates using a hot filament CVD technique and preparing a multi-layered pellet in which a nanocrystalline diamond (NCD) was deposited. The influences of the real contact area of CVD diamond on the surface roughness and material removal rate were studied using scanning electron microscopy, a stylus profilometer, atomic force microscopy, and Raman spectroscopy before and after polishing. In addition, the polishing effect of the sapphire wafer was analyzed and predicted by modeling the roughness and the real contact area of the diamond CVD pellet. To analyze the polishing characteristics according to changes in the area, the surface roughness of the NCD was varied from 65 to 115 nm, and the polishing was evaluated. The results showed that compared with the process using diamond slurry, the multilayer diamond pellet had a higher material removal rate and the same surface roughness and total thickness variation.
AB - To reduce the processing cost and to polish high hardness substrates, a change from the currently used slurry process to the process using fixed abrasive grain is required. Therefore, studying the fixed abrasive tool to improve yield and process stability is important. In this study, a chemical vapor deposition (CVD) diamond pellet with an artificially controlled contact area was applied to replace the slurry polishing process. The CVD diamond pellets were prepared by depositing a microcrystalline diamond on silicon nitride ceramic substrates using a hot filament CVD technique and preparing a multi-layered pellet in which a nanocrystalline diamond (NCD) was deposited. The influences of the real contact area of CVD diamond on the surface roughness and material removal rate were studied using scanning electron microscopy, a stylus profilometer, atomic force microscopy, and Raman spectroscopy before and after polishing. In addition, the polishing effect of the sapphire wafer was analyzed and predicted by modeling the roughness and the real contact area of the diamond CVD pellet. To analyze the polishing characteristics according to changes in the area, the surface roughness of the NCD was varied from 65 to 115 nm, and the polishing was evaluated. The results showed that compared with the process using diamond slurry, the multilayer diamond pellet had a higher material removal rate and the same surface roughness and total thickness variation.
KW - CVD diamond
KW - Material removal rate
KW - Real contact area
KW - Sapphire wafer polishing
KW - Surface roughness
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U2 - 10.1007/s12541-019-00057-5
DO - 10.1007/s12541-019-00057-5
M3 - Article
AN - SCOPUS:85066503406
VL - 20
SP - 883
EP - 891
JO - International Journal of Precision Engineering and Manufacturing
JF - International Journal of Precision Engineering and Manufacturing
SN - 1229-8557
IS - 6
ER -