TY - JOUR
T1 - Analysis of Si wafer coated by spin-on-glass for laser ablation ICP-MS
AU - Ryu, W. K.
AU - Kim, J. S.
AU - Lee, J. S.
AU - Lim, H. B.
AU - Jun, P. K.
PY - 2007
Y1 - 2007
N2 - A method involving laser ablation sector type inductively coupled plasma mass spectrometry (LA-ICP-MS) was developed for the direct determination of metal impurities in the spin-on-glass (SOG) layer on a silicon wafer surface. For a reference wafer, the preparation procedure for the SOG layer was re-designed and optimized in a sequence of spiking of known amounts of metal contaminants in SOG chemical (Model: P-MSQ, 5.5% silicon dioxide in polypylene and glycol-dimethyl ether), spin-coating, and baking. Optimization of the procedure affected the contamination levels of metals which were determined by a solution scanning sampling followed by a sector type ICP-MS analysis. For homogeneity study, 74 sectors of the SOG layer were individually scanned using a laboratory-made automatic scanner with a scanning solution. The average contamination levels of each sector were obtained in the range of 10 10-1012 atoms cm-2 under optimized conditions. SEM images of craters for LA, each produced by one laser shot (266 nm, 9 mJ per pulse), showed that the depths of the craters were larger than the thickness of the SOG layer, 2350 , and the diameter increased with the power and decreased with de-focused beam diameter. Limits of detection of LA-ICP-MS were estimated at ∼109 atoms cm-2 on the Si wafer surface, depending on the element.
AB - A method involving laser ablation sector type inductively coupled plasma mass spectrometry (LA-ICP-MS) was developed for the direct determination of metal impurities in the spin-on-glass (SOG) layer on a silicon wafer surface. For a reference wafer, the preparation procedure for the SOG layer was re-designed and optimized in a sequence of spiking of known amounts of metal contaminants in SOG chemical (Model: P-MSQ, 5.5% silicon dioxide in polypylene and glycol-dimethyl ether), spin-coating, and baking. Optimization of the procedure affected the contamination levels of metals which were determined by a solution scanning sampling followed by a sector type ICP-MS analysis. For homogeneity study, 74 sectors of the SOG layer were individually scanned using a laboratory-made automatic scanner with a scanning solution. The average contamination levels of each sector were obtained in the range of 10 10-1012 atoms cm-2 under optimized conditions. SEM images of craters for LA, each produced by one laser shot (266 nm, 9 mJ per pulse), showed that the depths of the craters were larger than the thickness of the SOG layer, 2350 , and the diameter increased with the power and decreased with de-focused beam diameter. Limits of detection of LA-ICP-MS were estimated at ∼109 atoms cm-2 on the Si wafer surface, depending on the element.
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U2 - 10.1039/b618184h
DO - 10.1039/b618184h
M3 - Article
AN - SCOPUS:34249691984
VL - 22
SP - 623
EP - 629
JO - Journal of Analytical Atomic Spectrometry
JF - Journal of Analytical Atomic Spectrometry
SN - 0267-9477
IS - 6
ER -