Analysis of surface dark current dependent upon surface passivation in APD based on GaAs

Hong Joo Song, Cheong Hyun Roh, Jun Ho Lee, Hong Goo Choi, Dong Ho Kim, Jung ho Park, Cheol Koo Hahn

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, we investigated the dependence of reverse dark current on two types of surface passivation, one of which is polyimide and the other is SiNx, for InAs quantum dots/GaAs separate absorption, charge, multiplication avalanche photodiode (SACM APD). From the experimental results, we found that dark current was dominated by surface current, and not bulk current. It was also noted that SiNx passivation has a surface current that is lower by three to nine times in magnitude than that in polyimide passivation in the whole range of bias. To analyze the difference in dark current due to the passivation types, we propose the theoretical current components. This shows that the dark current of both passivation types is mainly composed of generation-recombination (G-R) and tunneling components, originating from the surface. However, each component has a different magnitude for passivation types, which can be explained by carrier concentration and trap density. The dependence of dark current on temperature shows the different behaviors between passivation types and supports a theoretical description of current components.

Original languageEnglish
Article number065003
JournalSemiconductor Science and Technology
Volume24
Issue number6
DOIs
Publication statusPublished - 2009 Jun 10

Fingerprint

pamidronate
Dark currents
dark current
Passivation
passivity
polyimides
Polyimides
Avalanche photodiodes
gallium arsenide
multiplication
avalanches
Semiconductor quantum dots
photodiodes
Carrier concentration

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Analysis of surface dark current dependent upon surface passivation in APD based on GaAs. / Song, Hong Joo; Roh, Cheong Hyun; Lee, Jun Ho; Choi, Hong Goo; Kim, Dong Ho; Park, Jung ho; Hahn, Cheol Koo.

In: Semiconductor Science and Technology, Vol. 24, No. 6, 065003, 10.06.2009.

Research output: Contribution to journalArticle

Song, Hong Joo ; Roh, Cheong Hyun ; Lee, Jun Ho ; Choi, Hong Goo ; Kim, Dong Ho ; Park, Jung ho ; Hahn, Cheol Koo. / Analysis of surface dark current dependent upon surface passivation in APD based on GaAs. In: Semiconductor Science and Technology. 2009 ; Vol. 24, No. 6.
@article{b23039422b86467296cc290be55a28d1,
title = "Analysis of surface dark current dependent upon surface passivation in APD based on GaAs",
abstract = "In this paper, we investigated the dependence of reverse dark current on two types of surface passivation, one of which is polyimide and the other is SiNx, for InAs quantum dots/GaAs separate absorption, charge, multiplication avalanche photodiode (SACM APD). From the experimental results, we found that dark current was dominated by surface current, and not bulk current. It was also noted that SiNx passivation has a surface current that is lower by three to nine times in magnitude than that in polyimide passivation in the whole range of bias. To analyze the difference in dark current due to the passivation types, we propose the theoretical current components. This shows that the dark current of both passivation types is mainly composed of generation-recombination (G-R) and tunneling components, originating from the surface. However, each component has a different magnitude for passivation types, which can be explained by carrier concentration and trap density. The dependence of dark current on temperature shows the different behaviors between passivation types and supports a theoretical description of current components.",
author = "Song, {Hong Joo} and Roh, {Cheong Hyun} and Lee, {Jun Ho} and Choi, {Hong Goo} and Kim, {Dong Ho} and Park, {Jung ho} and Hahn, {Cheol Koo}",
year = "2009",
month = "6",
day = "10",
doi = "10.1088/0268-1242/24/6/065003",
language = "English",
volume = "24",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "6",

}

TY - JOUR

T1 - Analysis of surface dark current dependent upon surface passivation in APD based on GaAs

AU - Song, Hong Joo

AU - Roh, Cheong Hyun

AU - Lee, Jun Ho

AU - Choi, Hong Goo

AU - Kim, Dong Ho

AU - Park, Jung ho

AU - Hahn, Cheol Koo

PY - 2009/6/10

Y1 - 2009/6/10

N2 - In this paper, we investigated the dependence of reverse dark current on two types of surface passivation, one of which is polyimide and the other is SiNx, for InAs quantum dots/GaAs separate absorption, charge, multiplication avalanche photodiode (SACM APD). From the experimental results, we found that dark current was dominated by surface current, and not bulk current. It was also noted that SiNx passivation has a surface current that is lower by three to nine times in magnitude than that in polyimide passivation in the whole range of bias. To analyze the difference in dark current due to the passivation types, we propose the theoretical current components. This shows that the dark current of both passivation types is mainly composed of generation-recombination (G-R) and tunneling components, originating from the surface. However, each component has a different magnitude for passivation types, which can be explained by carrier concentration and trap density. The dependence of dark current on temperature shows the different behaviors between passivation types and supports a theoretical description of current components.

AB - In this paper, we investigated the dependence of reverse dark current on two types of surface passivation, one of which is polyimide and the other is SiNx, for InAs quantum dots/GaAs separate absorption, charge, multiplication avalanche photodiode (SACM APD). From the experimental results, we found that dark current was dominated by surface current, and not bulk current. It was also noted that SiNx passivation has a surface current that is lower by three to nine times in magnitude than that in polyimide passivation in the whole range of bias. To analyze the difference in dark current due to the passivation types, we propose the theoretical current components. This shows that the dark current of both passivation types is mainly composed of generation-recombination (G-R) and tunneling components, originating from the surface. However, each component has a different magnitude for passivation types, which can be explained by carrier concentration and trap density. The dependence of dark current on temperature shows the different behaviors between passivation types and supports a theoretical description of current components.

UR - http://www.scopus.com/inward/record.url?scp=78349236496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78349236496&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/24/6/065003

DO - 10.1088/0268-1242/24/6/065003

M3 - Article

VL - 24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

M1 - 065003

ER -