Abstract
The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.
| Original language | English |
|---|---|
| Pages (from-to) | 5084-5087 |
| Number of pages | 4 |
| Journal | Materials Research Bulletin |
| Volume | 48 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2013 May 28 |
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Keywords
- 3D NAND
- Charge pumping technique
- CTF
- SONOS
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications. / An, Ho Myoung; Kim, Hee Dong; Kim, Tae Geun.
In: Materials Research Bulletin, Vol. 48, No. 12, 28.05.2013, p. 5084-5087.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications
AU - An, Ho Myoung
AU - Kim, Hee Dong
AU - Kim, Tae Geun
PY - 2013/5/28
Y1 - 2013/5/28
N2 - The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.
AB - The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.
KW - 3D NAND
KW - Charge pumping technique
KW - CTF
KW - SONOS
UR - http://www.scopus.com/inward/record.url?scp=84885950501&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885950501&partnerID=8YFLogxK
U2 - 10.1016/j.materresbull.2013.05.008
DO - 10.1016/j.materresbull.2013.05.008
M3 - Article
AN - SCOPUS:84885950501
VL - 48
SP - 5084
EP - 5087
JO - Materials Research Bulletin
JF - Materials Research Bulletin
SN - 0025-5408
IS - 12
ER -