Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Ho Myoung An, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.

Original languageEnglish
Pages (from-to)5084-5087
Number of pages4
JournalMaterials Research Bulletin
Volume48
Issue number12
DOIs
Publication statusPublished - 2013 May 28

Fingerprint

Oxides
flash
tunnels
Tunnels
energy distribution
pumping
Flash memory
traps
Thin film transistors
degradation
Degradation
cycles
oxides
cells
transistors
Transconductance
Electron energy levels
transconductance
thin films
decay rates

Keywords

  • 3D NAND
  • Charge pumping technique
  • CTF
  • SONOS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications. / An, Ho Myoung; Kim, Hee Dong; Kim, Tae Geun.

In: Materials Research Bulletin, Vol. 48, No. 12, 28.05.2013, p. 5084-5087.

Research output: Contribution to journalArticle

@article{ac73176e1d5e44bf90101bc9543ef2c1,
title = "Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications",
abstract = "The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.",
keywords = "3D NAND, Charge pumping technique, CTF, SONOS",
author = "An, {Ho Myoung} and Kim, {Hee Dong} and Kim, {Tae Geun}",
year = "2013",
month = "5",
day = "28",
doi = "10.1016/j.materresbull.2013.05.008",
language = "English",
volume = "48",
pages = "5084--5087",
journal = "Materials Research Bulletin",
issn = "0025-5408",
publisher = "Elsevier Limited",
number = "12",

}

TY - JOUR

T1 - Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

AU - An, Ho Myoung

AU - Kim, Hee Dong

AU - Kim, Tae Geun

PY - 2013/5/28

Y1 - 2013/5/28

N2 - The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.

AB - The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.

KW - 3D NAND

KW - Charge pumping technique

KW - CTF

KW - SONOS

UR - http://www.scopus.com/inward/record.url?scp=84885950501&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885950501&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2013.05.008

DO - 10.1016/j.materresbull.2013.05.008

M3 - Article

AN - SCOPUS:84885950501

VL - 48

SP - 5084

EP - 5087

JO - Materials Research Bulletin

JF - Materials Research Bulletin

SN - 0025-5408

IS - 12

ER -