Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Ho Myoung An, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)


The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.

Original languageEnglish
Pages (from-to)5084-5087
Number of pages4
JournalMaterials Research Bulletin
Issue number12
Publication statusPublished - 2013 May 28



  • 3D NAND
  • Charge pumping technique
  • CTF

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this