Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers

Jeong Suk Park, Seong Rae Lee, Young-geun Kim

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1 Citation (Scopus)

Abstract

A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.

Original languageEnglish
Pages (from-to)2399-2401
Number of pages3
JournalIEEE Transactions on Magnetics
Volume39
Issue number5 II
DOIs
Publication statusPublished - 2003 Sep 1

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Magnetoresistance
Exchange coupling
Sensitivity analysis
Magnetization
Multilayers
sensitivity analysis
energy transfer
saturation
magnetization
cells
energy

Keywords

  • Bias point
  • CoFe-Ru-CoFe-Ru-CoFe
  • Magnetoresistance
  • Sensitivity
  • Spin-valves
  • Synthetic antiferromagnet

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers",
abstract = "A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.",
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AB - A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.

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