Abstract
A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.
| Original language | English |
|---|---|
| Pages (from-to) | 2399-2401 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 39 |
| Issue number | 5 II |
| DOIs | |
| Publication status | Published - 2003 Sep 1 |
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Keywords
- Bias point
- CoFe-Ru-CoFe-Ru-CoFe
- Magnetoresistance
- Sensitivity
- Spin-valves
- Synthetic antiferromagnet
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers. / Park, Jeong Suk; Lee, Seong Rae; Kim, Young-geun.
In: IEEE Transactions on Magnetics, Vol. 39, No. 5 II, 01.09.2003, p. 2399-2401.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers
AU - Park, Jeong Suk
AU - Lee, Seong Rae
AU - Kim, Young-geun
PY - 2003/9/1
Y1 - 2003/9/1
N2 - A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.
AB - A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.
KW - Bias point
KW - CoFe-Ru-CoFe-Ru-CoFe
KW - Magnetoresistance
KW - Sensitivity
KW - Spin-valves
KW - Synthetic antiferromagnet
UR - http://www.scopus.com/inward/record.url?scp=0141988570&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0141988570&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2003.815462
DO - 10.1109/TMAG.2003.815462
M3 - Article
VL - 39
SP - 2399
EP - 2401
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 5 II
ER -