Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers

Jeong Suk Park; Seong Rae Lee; Young Keun Kim

doi:10.1109/TMAG.2003.815462

Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers

Jeong Suk Park, Seong Rae Lee, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (H_ex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J₁) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (J_eb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J ₁ was mainly related with the saturation field (H_s) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H _sub) occurred, while J_eb influenced on the H _ex.eff. R raised the MR ratio between the main peak and subpeak. As J₁ increased, H_ex.eff also increased. As the cell dimension decreased below 1 μm, H_ex.eff and H_s increased while H_sub decreased rapidly.

Original language	English
Pages (from-to)	2399-2401
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	39
Issue number	5 II
DOIs	https://doi.org/10.1109/TMAG.2003.815462
Publication status	Published - 2003 Sep

Keywords

Bias point
CoFe-Ru-CoFe-Ru-CoFe
Magnetoresistance
Sensitivity
Spin-valves
Synthetic antiferromagnet

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2003.815462

Fingerprint Dive into the research topics of 'Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers'. Together they form a unique fingerprint.

Cite this

@article{bcbfab9ddfdc48ed90f661ee42f6f154,

title = "Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers",

abstract = "A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.",

keywords = "Bias point, CoFe-Ru-CoFe-Ru-CoFe, Magnetoresistance, Sensitivity, Spin-valves, Synthetic antiferromagnet",

author = "Park, {Jeong Suk} and Lee, {Seong Rae} and Kim, {Young Keun}",

note = "Funding Information: Manuscript received January 6, 2003. This work was supported by Grant R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21 century Frontier Programs, the National Research Laboratory Program, the Advanced Backbone Information and Telecommunication Technology Development Project of the Korea Ministry of Information and Communication through Samsung Advanced Institute of Technology, and by the DuPont Young Professor Program.",

year = "2003",

month = sep,

doi = "10.1109/TMAG.2003.815462",

language = "English",

volume = "39",

pages = "2399--2401",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 II",

}

TY - JOUR

T1 - Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers

AU - Park, Jeong Suk

AU - Lee, Seong Rae

AU - Kim, Young Keun

N1 - Funding Information: Manuscript received January 6, 2003. This work was supported by Grant R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21 century Frontier Programs, the National Research Laboratory Program, the Advanced Backbone Information and Telecommunication Technology Development Project of the Korea Ministry of Information and Communication through Samsung Advanced Institute of Technology, and by the DuPont Young Professor Program.

PY - 2003/9

Y1 - 2003/9

N2 - A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.

AB - A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.

KW - Bias point

KW - CoFe-Ru-CoFe-Ru-CoFe

KW - Magnetoresistance

KW - Sensitivity

KW - Spin-valves

KW - Synthetic antiferromagnet

UR - http://www.scopus.com/inward/record.url?scp=0141988570&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2003.815462

DO - 10.1109/TMAG.2003.815462

M3 - Article

AN - SCOPUS:0141988570

VL - 39

SP - 2399

EP - 2401

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5 II

ER -

Analysis on Giant Magnetoresistive Characteristics of Synthetic Antiferromagnet-Based Spin Valves with Modified Pinned Layers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this