Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Ji Eun Lee, Joo Hyung Park, Jun Sik Cho, Jin Won Chung, Jinsoo Song, Donghwan Kim, Jeong Chul Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si 1 - xC x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si 1 - xC x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si 1 - xC x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.

Original languageEnglish
Pages (from-to)6007-6011
Number of pages5
JournalThin Solid Films
Volume520
Issue number18
DOIs
Publication statusPublished - 2012 Jul 1

Fingerprint

Silicon solar cells
Amorphous silicon
Silicon carbide
silicon carbides
Oxides
amorphous silicon
Solar cells
buffers
solar cells
Energy barriers
conduction
oxides
thin films
Buffers
Buffer layers
electric contacts
Ultraviolet photoelectron spectroscopy
Zinc Oxide
Microcrystalline silicon
electrical resistivity

Keywords

  • Aluminum-doped zinc oxide
  • Amorphous silicon
  • Barrier height
  • Buffer layer
  • Fill factor
  • Fluorine-doped tin oxide
  • Solar cell
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure. / Lee, Ji Eun; Park, Joo Hyung; Cho, Jun Sik; Chung, Jin Won; Song, Jinsoo; Kim, Donghwan; Lee, Jeong Chul.

In: Thin Solid Films, Vol. 520, No. 18, 01.07.2012, p. 6007-6011.

Research output: Contribution to journalArticle

Lee, Ji Eun ; Park, Joo Hyung ; Cho, Jun Sik ; Chung, Jin Won ; Song, Jinsoo ; Kim, Donghwan ; Lee, Jeong Chul. / Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure. In: Thin Solid Films. 2012 ; Vol. 520, No. 18. pp. 6007-6011.
@article{ad5a3130d2ff4f2a979f3b259e07fa93,
title = "Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure",
abstract = "Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si 1 - xC x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si 1 - xC x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si 1 - xC x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.",
keywords = "Aluminum-doped zinc oxide, Amorphous silicon, Barrier height, Buffer layer, Fill factor, Fluorine-doped tin oxide, Solar cell, Thin films",
author = "Lee, {Ji Eun} and Park, {Joo Hyung} and Cho, {Jun Sik} and Chung, {Jin Won} and Jinsoo Song and Donghwan Kim and Lee, {Jeong Chul}",
year = "2012",
month = "7",
day = "1",
doi = "10.1016/j.tsf.2012.04.081",
language = "English",
volume = "520",
pages = "6007--6011",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "18",

}

TY - JOUR

T1 - Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

AU - Lee, Ji Eun

AU - Park, Joo Hyung

AU - Cho, Jun Sik

AU - Chung, Jin Won

AU - Song, Jinsoo

AU - Kim, Donghwan

AU - Lee, Jeong Chul

PY - 2012/7/1

Y1 - 2012/7/1

N2 - Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si 1 - xC x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si 1 - xC x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si 1 - xC x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.

AB - Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si 1 - xC x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si 1 - xC x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si 1 - xC x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.

KW - Aluminum-doped zinc oxide

KW - Amorphous silicon

KW - Barrier height

KW - Buffer layer

KW - Fill factor

KW - Fluorine-doped tin oxide

KW - Solar cell

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84862226129&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862226129&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.04.081

DO - 10.1016/j.tsf.2012.04.081

M3 - Article

AN - SCOPUS:84862226129

VL - 520

SP - 6007

EP - 6011

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 18

ER -