Analytical calculation and fabrication of FET-embedded capacitive micromachined ultrasonic transducer

Jin Soo Park, Jung Yeon Kim, Ji Hoon Lee, Hee Kyoung Bae, Jinsik Kim, Kyo Seon Hwang, Jung ho Park, Rino Choi, Byung Chul Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, we present a full analytical model that can simulate an entire CMUT-FET structure with high accuracy and fast computation. Using the proposed analytical model, electromechanical properties, electrical characteristics (Id-Vg), and pressure sensitivity of the CMUT-FET are simulated and analyzed. The optimal bias point of the CMUT-FET is found to be 1.3 V (Sub-threshold operation), at which the calculated pressure sensitivity is 2.584 × 10-6 Pa-1. This optimum bias point is almost 11 times lower than 80 % pull-in voltage for conventional high-frequency CMUTs. As a consecutive work, we also report on a fabrication process of the CMUT-FET with nickel-silicided source/drain junctions and low-temperature wafer bonding. The low-temperature wafer bonding successfully demonstrates the direct integration of CMUT on FET, which is verified via cross-sectional inspection. The fabrication technique is a promising solution and can be developed further to for integration with ICs.

Original languageEnglish
Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
PublisherIEEE Computer Society
ISBN (Electronic)9781538633830
DOIs
Publication statusPublished - 2017 Oct 31
Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
Duration: 2017 Sep 62017 Sep 9

Other

Other2017 IEEE International Ultrasonics Symposium, IUS 2017
CountryUnited States
CityWashington
Period17/9/617/9/9

Fingerprint

transducers
field effect transistors
ultrasonics
fabrication
wafers
inspection
electrical properties
nickel
thresholds
electric potential

Keywords

  • Analytical model
  • Field-effect transistor-embedded capacitive micromachined ultrasonic transducer (CMUT-FET)
  • High-frequency operation
  • Low-temperature wafer bonding

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Park, J. S., Kim, J. Y., Lee, J. H., Bae, H. K., Kim, J., Hwang, K. S., ... Lee, B. C. (2017). Analytical calculation and fabrication of FET-embedded capacitive micromachined ultrasonic transducer. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092012] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092012

Analytical calculation and fabrication of FET-embedded capacitive micromachined ultrasonic transducer. / Park, Jin Soo; Kim, Jung Yeon; Lee, Ji Hoon; Bae, Hee Kyoung; Kim, Jinsik; Hwang, Kyo Seon; Park, Jung ho; Choi, Rino; Lee, Byung Chul.

2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. 8092012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, JS, Kim, JY, Lee, JH, Bae, HK, Kim, J, Hwang, KS, Park, JH, Choi, R & Lee, BC 2017, Analytical calculation and fabrication of FET-embedded capacitive micromachined ultrasonic transducer. in 2017 IEEE International Ultrasonics Symposium, IUS 2017., 8092012, IEEE Computer Society, 2017 IEEE International Ultrasonics Symposium, IUS 2017, Washington, United States, 17/9/6. https://doi.org/10.1109/ULTSYM.2017.8092012
Park JS, Kim JY, Lee JH, Bae HK, Kim J, Hwang KS et al. Analytical calculation and fabrication of FET-embedded capacitive micromachined ultrasonic transducer. In 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society. 2017. 8092012 https://doi.org/10.1109/ULTSYM.2017.8092012
Park, Jin Soo ; Kim, Jung Yeon ; Lee, Ji Hoon ; Bae, Hee Kyoung ; Kim, Jinsik ; Hwang, Kyo Seon ; Park, Jung ho ; Choi, Rino ; Lee, Byung Chul. / Analytical calculation and fabrication of FET-embedded capacitive micromachined ultrasonic transducer. 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017.
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