Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure

Jeong Kyu Kim, Gwang Sik Kim, Changhwan Shin, Jin Hong Park, Krishna C. Saraswat, Hyun-Yong Yu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We present a new model to demonstrate the effect of heavily doped interfacial layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-ILsemiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 1020 cm-3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.

Original languageEnglish
Article number6822535
Pages (from-to)705-707
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure'. Together they form a unique fingerprint.

  • Cite this