Angular dependence of tunneling magnetoresistance in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions

Seonghoon Choi, Taehee Yoo, Seul Ki Bac, Hakjoon Lee, Sangyeop Lee, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

Abstract

Tunneling magnetoresistance (TMR) phenomena in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions (MTJs) were investigated by rotating a magnetic field of constant strength in the film plane. When a strong field (e.g., 4000 G) is used, the magnetization in GaMnAs and Fe coherently rotates in both layers, resulting in a smooth angular dependence of TMR. In contrast, abrupt transition steps and plateaus are observed in TMR, when a weak field (below 100 G) is rotated. The behavior observed in strong fields is ascribed to tunneling anisotropic magnetoresistance, an effect that occurs when magnetizations in both magnetic layers in the MTJ are aligned parallel to each other. The tunneling behavior observed in weak fields, on the other hand, is caused by differences in relative magnetization alignments in the two layers that arise from differences in their magnetocrystalline anisotropies. The latter behavior provided the anisotropic TMR that involved with parallel and antiparallel alignments at specific crystallographic directions.

Original languageEnglish
Article number7393583
JournalIEEE Transactions on Magnetics
Volume52
Issue number7
DOIs
Publication statusPublished - 2016 Jul 1

Fingerprint

Tunnelling magnetoresistance
Tunnel junctions
Enhanced magnetoresistance
Magnetization
Magnetocrystalline anisotropy
Magnetic fields

Keywords

  • anisotropic tunneling magnetoresistance
  • Magnetic tunnel junction
  • tunneling anisotropic magnetoresistance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Angular dependence of tunneling magnetoresistance in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions. / Choi, Seonghoon; Yoo, Taehee; Bac, Seul Ki; Lee, Hakjoon; Lee, Sangyeop; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: IEEE Transactions on Magnetics, Vol. 52, No. 7, 7393583, 01.07.2016.

Research output: Contribution to journalArticle

Choi, Seonghoon ; Yoo, Taehee ; Bac, Seul Ki ; Lee, Hakjoon ; Lee, Sangyeop ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Angular dependence of tunneling magnetoresistance in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions. In: IEEE Transactions on Magnetics. 2016 ; Vol. 52, No. 7.
@article{5437cda76e224871b3d463fe8af40af4,
title = "Angular dependence of tunneling magnetoresistance in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions",
abstract = "Tunneling magnetoresistance (TMR) phenomena in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions (MTJs) were investigated by rotating a magnetic field of constant strength in the film plane. When a strong field (e.g., 4000 G) is used, the magnetization in GaMnAs and Fe coherently rotates in both layers, resulting in a smooth angular dependence of TMR. In contrast, abrupt transition steps and plateaus are observed in TMR, when a weak field (below 100 G) is rotated. The behavior observed in strong fields is ascribed to tunneling anisotropic magnetoresistance, an effect that occurs when magnetizations in both magnetic layers in the MTJ are aligned parallel to each other. The tunneling behavior observed in weak fields, on the other hand, is caused by differences in relative magnetization alignments in the two layers that arise from differences in their magnetocrystalline anisotropies. The latter behavior provided the anisotropic TMR that involved with parallel and antiparallel alignments at specific crystallographic directions.",
keywords = "anisotropic tunneling magnetoresistance, Magnetic tunnel junction, tunneling anisotropic magnetoresistance",
author = "Seonghoon Choi and Taehee Yoo and Bac, {Seul Ki} and Hakjoon Lee and Sangyeop Lee and Lee, {Sang Hoon} and X. Liu and Furdyna, {J. K.}",
year = "2016",
month = "7",
day = "1",
doi = "10.1109/TMAG.2016.2521760",
language = "English",
volume = "52",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Angular dependence of tunneling magnetoresistance in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions

AU - Choi, Seonghoon

AU - Yoo, Taehee

AU - Bac, Seul Ki

AU - Lee, Hakjoon

AU - Lee, Sangyeop

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - Tunneling magnetoresistance (TMR) phenomena in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions (MTJs) were investigated by rotating a magnetic field of constant strength in the film plane. When a strong field (e.g., 4000 G) is used, the magnetization in GaMnAs and Fe coherently rotates in both layers, resulting in a smooth angular dependence of TMR. In contrast, abrupt transition steps and plateaus are observed in TMR, when a weak field (below 100 G) is rotated. The behavior observed in strong fields is ascribed to tunneling anisotropic magnetoresistance, an effect that occurs when magnetizations in both magnetic layers in the MTJ are aligned parallel to each other. The tunneling behavior observed in weak fields, on the other hand, is caused by differences in relative magnetization alignments in the two layers that arise from differences in their magnetocrystalline anisotropies. The latter behavior provided the anisotropic TMR that involved with parallel and antiparallel alignments at specific crystallographic directions.

AB - Tunneling magnetoresistance (TMR) phenomena in hybrid Fe/GaAlAs/GaMnAs magnetic tunnel junctions (MTJs) were investigated by rotating a magnetic field of constant strength in the film plane. When a strong field (e.g., 4000 G) is used, the magnetization in GaMnAs and Fe coherently rotates in both layers, resulting in a smooth angular dependence of TMR. In contrast, abrupt transition steps and plateaus are observed in TMR, when a weak field (below 100 G) is rotated. The behavior observed in strong fields is ascribed to tunneling anisotropic magnetoresistance, an effect that occurs when magnetizations in both magnetic layers in the MTJ are aligned parallel to each other. The tunneling behavior observed in weak fields, on the other hand, is caused by differences in relative magnetization alignments in the two layers that arise from differences in their magnetocrystalline anisotropies. The latter behavior provided the anisotropic TMR that involved with parallel and antiparallel alignments at specific crystallographic directions.

KW - anisotropic tunneling magnetoresistance

KW - Magnetic tunnel junction

KW - tunneling anisotropic magnetoresistance

UR - http://www.scopus.com/inward/record.url?scp=84977177465&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84977177465&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2016.2521760

DO - 10.1109/TMAG.2016.2521760

M3 - Article

AN - SCOPUS:84977177465

VL - 52

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 7

M1 - 7393583

ER -