Anisotropic magnetoresistance in a Ni 81 Fe 19 /SiO 2 /Ca-Bi 2 Se 3 hybrid structure

Sung Jong Kim, Youn Ho Park, Chaun Jang, Andrzej Hruban, Hyun Cheol Koo

Research output: Contribution to journalArticle

Abstract

A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.

Original languageEnglish
Pages (from-to)87-91
Number of pages5
JournalThin Solid Films
Volume676
DOIs
Publication statusPublished - 2019 Apr 30

Keywords

  • Anisotropic magnetoresistance
  • Magnetic anisotropy
  • Magnetic switching
  • Spin-momentum locking
  • Topological insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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