Anisotropic magnetoresistance in a Ni 81 Fe 19 /SiO 2 /Ca-Bi 2 Se 3 hybrid structure

Sung Jong Kim, Youn Ho Park, Chaun Jang, Andrzej Hruban, Hyun Cheol Koo

Research output: Contribution to journalArticle

Abstract

A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.

Original languageEnglish
Pages (from-to)87-91
Number of pages5
JournalThin Solid Films
Volume676
DOIs
Publication statusPublished - 2019 Apr 30

Fingerprint

Enhanced magnetoresistance
hybrid structures
Bias currents
locking
Momentum
insulators
Thin film devices
momentum
Magnetization reversal
magnetization
Ferromagnetic materials
ferromagnetic materials
Magnetic anisotropy
Magnetoresistance
Magnetization
alignment
conduction
anisotropy
Electrodes
electrodes

Keywords

  • Anisotropic magnetoresistance
  • Magnetic anisotropy
  • Magnetic switching
  • Spin-momentum locking
  • Topological insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Anisotropic magnetoresistance in a Ni 81 Fe 19 /SiO 2 /Ca-Bi 2 Se 3 hybrid structure . / Kim, Sung Jong; Park, Youn Ho; Jang, Chaun; Hruban, Andrzej; Koo, Hyun Cheol.

In: Thin Solid Films, Vol. 676, 30.04.2019, p. 87-91.

Research output: Contribution to journalArticle

Kim, Sung Jong ; Park, Youn Ho ; Jang, Chaun ; Hruban, Andrzej ; Koo, Hyun Cheol. / Anisotropic magnetoresistance in a Ni 81 Fe 19 /SiO 2 /Ca-Bi 2 Se 3 hybrid structure In: Thin Solid Films. 2019 ; Vol. 676. pp. 87-91.
@article{8e79c15373a04db5a9c3085cbc861fc6,
title = "Anisotropic magnetoresistance in a Ni 81 Fe 19 /SiO 2 /Ca-Bi 2 Se 3 hybrid structure",
abstract = "A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.",
keywords = "Anisotropic magnetoresistance, Magnetic anisotropy, Magnetic switching, Spin-momentum locking, Topological insulator",
author = "Kim, {Sung Jong} and Park, {Youn Ho} and Chaun Jang and Andrzej Hruban and Koo, {Hyun Cheol}",
year = "2019",
month = "4",
day = "30",
doi = "10.1016/j.tsf.2019.03.004",
language = "English",
volume = "676",
pages = "87--91",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Anisotropic magnetoresistance in a Ni 81 Fe 19 /SiO 2 /Ca-Bi 2 Se 3 hybrid structure

AU - Kim, Sung Jong

AU - Park, Youn Ho

AU - Jang, Chaun

AU - Hruban, Andrzej

AU - Koo, Hyun Cheol

PY - 2019/4/30

Y1 - 2019/4/30

N2 - A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.

AB - A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.

KW - Anisotropic magnetoresistance

KW - Magnetic anisotropy

KW - Magnetic switching

KW - Spin-momentum locking

KW - Topological insulator

UR - http://www.scopus.com/inward/record.url?scp=85062677843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062677843&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2019.03.004

DO - 10.1016/j.tsf.2019.03.004

M3 - Article

AN - SCOPUS:85062677843

VL - 676

SP - 87

EP - 91

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -