Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, In Hwan Lee, Jin Woo Ju, S. J. Pearton

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16 Citations (Scopus)

Abstract

Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [11 2- 0] direction compared to the [0001] direction.

Original languageEnglish
Article number142103
JournalApplied Physics Letters
Volume94
Issue number14
DOIs
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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