Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, In Hwan Lee, Jin Woo Ju, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth'. Together they form a unique fingerprint.

Physics & Astronomy