TY - JOUR
T1 - Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers
AU - Xian, Minghan
AU - Fares, Chaker
AU - Bae, Jinho
AU - Kim, Jihyun
AU - Ren, Fan
AU - Pearton, S. J.
PY - 2019
Y1 - 2019
N2 - Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 × 1013 cm-2 or 10 MeV protons to fluences of 1-3 × 1014 cm-2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm-1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.
AB - Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 × 1013 cm-2 or 10 MeV protons to fluences of 1-3 × 1014 cm-2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm-1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.
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U2 - 10.1149/2.0231912jss
DO - 10.1149/2.0231912jss
M3 - Article
AN - SCOPUS:85077499140
VL - 8
SP - P799-P804
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 12
ER -