Anodic bonding technique for silicon-to-ITO coated glass bonding

Woo Beom Choi; Byeong Kwon Ju; Yun-Hi Lee; Myung Hwan Oh; Man Young Sung

doi:10.1117/12.276624

Anodic bonding technique for silicon-to-ITO coated glass bonding

Woo Beom Choi, Byeong Kwon Ju, Yun-Hi Lee, Myung Hwan Oh, Man Young Sung

Research output: Contribution to journal › Conference article › peer-review

Abstract

We performed silicon-to-In₂0₃:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In₂0₃:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy (AES). In this work, silicon and In₂0₃:Sn coated glass with the deposited glass layer can be bonded at 190°C with an applied voltage of 6OV_DC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy (SIMS) analysis were used to confirm the modeled bonding kinetics of silicon-to-In₂0₃:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display (FED).

Original language	English
Pages (from-to)	336-341
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3046
DOIs	https://doi.org/10.1117/12.276624
Publication status	Published - 1997 Jun 19
Event	Smart Structures and Materials 1997: Smart Electronics and MEMS - San Diego, United States Duration: 1997 Mar 3 → 1997 Mar 6

Keywords

Anodic bonding
Silicon-to-ito coated glass bonding
Sims analysis

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.276624

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@article{cea1abb0080447dfb903f214c38baa58,

title = "Anodic bonding technique for silicon-to-ITO coated glass bonding",

abstract = "We performed silicon-to-In203:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In203:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy (AES). In this work, silicon and In203:Sn coated glass with the deposited glass layer can be bonded at 190°C with an applied voltage of 6OVDC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy (SIMS) analysis were used to confirm the modeled bonding kinetics of silicon-to-In203:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display (FED).",

keywords = "Anodic bonding, Silicon-to-ito coated glass bonding, Sims analysis",

author = "Choi, {Woo Beom} and Ju, {Byeong Kwon} and Yun-Hi Lee and Oh, {Myung Hwan} and Sung, {Man Young}",

note = "Funding Information: This work was supported by Ministry of Trade, Industry and Energy in Korea. Publisher Copyright: {\textcopyright} 1997 SPIE. All rights reserved.; Smart Structures and Materials 1997: Smart Electronics and MEMS ; Conference date: 03-03-1997 Through 06-03-1997",

year = "1997",

month = jun,

day = "19",

doi = "10.1117/12.276624",

language = "English",

volume = "3046",

pages = "336--341",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

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TY - JOUR

T1 - Anodic bonding technique for silicon-to-ITO coated glass bonding

AU - Choi, Woo Beom

AU - Ju, Byeong Kwon

AU - Lee, Yun-Hi

AU - Oh, Myung Hwan

AU - Sung, Man Young

PY - 1997/6/19

Y1 - 1997/6/19

N2 - We performed silicon-to-In203:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In203:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy (AES). In this work, silicon and In203:Sn coated glass with the deposited glass layer can be bonded at 190°C with an applied voltage of 6OVDC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy (SIMS) analysis were used to confirm the modeled bonding kinetics of silicon-to-In203:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display (FED).

AB - We performed silicon-to-In203:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In203:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy (AES). In this work, silicon and In203:Sn coated glass with the deposited glass layer can be bonded at 190°C with an applied voltage of 6OVDC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy (SIMS) analysis were used to confirm the modeled bonding kinetics of silicon-to-In203:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display (FED).

KW - Anodic bonding

KW - Silicon-to-ito coated glass bonding

KW - Sims analysis

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U2 - 10.1117/12.276624

DO - 10.1117/12.276624

M3 - Conference article

AN - SCOPUS:85076997303

SN - 0277-786X

VL - 3046

SP - 336

EP - 341

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Smart Structures and Materials 1997: Smart Electronics and MEMS

Y2 - 3 March 1997 through 6 March 1997

ER -

Anodic bonding technique for silicon-to-ITO coated glass bonding

Abstract

Keywords

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