Anodic bonding technique under low temperature and low voltage using evaporated glass

Woo Beom Choi; Byeong Kwon Ju; Yun Hi Lee; M. R. Haskard; Man Young Sung; Myung Hwan Oh

doi:10.1116/1.589603

Anodic bonding technique under low temperature and low voltage using evaporated glass

Woo Beom Choi, Byeong Kwon Ju, Yun Hi Lee, M. R. Haskard, Man Young Sung, Myung Hwan Oh

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 V_de, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.

Original language	English
Pages (from-to)	477-481
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	2
DOIs	https://doi.org/10.1116/1.589603
Publication status	Published - 1997

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.589603

Cite this

Anodic bonding technique under low temperature and low voltage using evaporated glass. / Choi, Woo Beom; Ju, Byeong Kwon; Lee, Yun Hi; Haskard, M. R.; Sung, Man Young; Oh, Myung Hwan.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 2, 1997, p. 477-481.

Research output: Contribution to journal › Article › peer-review

@article{38eb4a0e7af84d0fa56b4024c85b9f11,

title = "Anodic bonding technique under low temperature and low voltage using evaporated glass",

abstract = "A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.",

author = "Choi, {Woo Beom} and Ju, {Byeong Kwon} and Lee, {Yun Hi} and Haskard, {M. R.} and Sung, {Man Young} and Oh, {Myung Hwan}",

year = "1997",

doi = "10.1116/1.589603",

language = "English",

volume = "15",

pages = "477--481",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Anodic bonding technique under low temperature and low voltage using evaporated glass

AU - Choi, Woo Beom

AU - Ju, Byeong Kwon

AU - Lee, Yun Hi

AU - Haskard, M. R.

AU - Sung, Man Young

AU - Oh, Myung Hwan

PY - 1997

Y1 - 1997

N2 - A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.

AB - A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.

UR - http://www.scopus.com/inward/record.url?scp=0000935967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000935967&partnerID=8YFLogxK

U2 - 10.1116/1.589603

DO - 10.1116/1.589603

M3 - Article

AN - SCOPUS:0000935967

VL - 15

SP - 477

EP - 481

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 2

ER -

Anodic bonding technique under low temperature and low voltage using evaporated glass

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this