Anodic bonding technique under low temperature and low voltage using evaporated glass

Woo Beom Choi; Byeong Kwon Ju; Yun Hi Lee; M. R. Haskard; Man Young Sung; Myung Hwan Oh

doi:10.1116/1.589603

Anodic bonding technique under low temperature and low voltage using evaporated glass

Woo Beom Choi, Byeong Kwon Ju, Yun Hi Lee, M. R. Haskard, Man Young Sung, Myung Hwan Oh

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 V_de, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.

Original language	English
Pages (from-to)	477-481
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	2
DOIs	https://doi.org/10.1116/1.589603
Publication status	Published - 1997

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Anodic bonding technique under low temperature and low voltage using evaporated glass. / Choi, Woo Beom; Ju, Byeong Kwon; Lee, Yun Hi; Haskard, M. R.; Sung, Man Young; Oh, Myung Hwan.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 2, 1997, p. 477-481.

Research output: Contribution to journal › Article › peer-review

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AU - Sung, Man Young

AU - Oh, Myung Hwan

PY - 1997

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AB - A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.

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Anodic bonding technique under low temperature and low voltage using evaporated glass

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