Abstract
A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 477-481 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 15 |
| Issue number | 2 |
| Publication status | Published - 1997 Mar 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
Cite this
Anodic bonding technique under low temperature and low voltage using evaporated glass. / Choi, Woo Beom; Ju, Byeong Kwon; Lee, Yun-Hi; Haskard, M. R.; Sung, Man Young; Oh, Myung Hwan.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 2, 01.03.1997, p. 477-481.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Anodic bonding technique under low temperature and low voltage using evaporated glass
AU - Choi, Woo Beom
AU - Ju, Byeong Kwon
AU - Lee, Yun-Hi
AU - Haskard, M. R.
AU - Sung, Man Young
AU - Oh, Myung Hwan
PY - 1997/3/1
Y1 - 1997/3/1
N2 - A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.
AB - A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.
UR - http://www.scopus.com/inward/record.url?scp=0000935967&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000935967&partnerID=8YFLogxK
M3 - Article
VL - 15
SP - 477
EP - 481
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 2
ER -