Anodic bonding technique under low temperature and low voltage using evaporated glass

Woo Beom Choi, Byeong Kwon Ju, Yun-Hi Lee, M. R. Haskard, Man Young Sung, Myung Hwan Oh

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A silicon-to-silicon anodic bonding process using a glass layer deposited by electron beam evaporation will be described. Wafers are bonded at a temperature as low as 135 °C with an applied voltage as small as 35 Vde, enabling this technique to be applied to vacuum packaging of microelectronic devices. Experimental results reveal that an evaporated glass layer of more than 1 μm thick is suitable for anodic bonding. Finally, the role of sodium ions in anodic bonding was also studied by investigating the theoretical bonding mechanism and examining the results of secondary ion mass spectroscopy analysis.

Original languageEnglish
Pages (from-to)477-481
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number2
Publication statusPublished - 1997 Mar 1

Fingerprint

low voltage
Glass
glass
Electric potential
electric potential
Silicon
Temperature
Ions
silicon
packaging
microelectronics
Microelectronics
Electron beams
Packaging
ions
Evaporation
mass spectroscopy
Sodium
sodium
evaporation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Anodic bonding technique under low temperature and low voltage using evaporated glass. / Choi, Woo Beom; Ju, Byeong Kwon; Lee, Yun-Hi; Haskard, M. R.; Sung, Man Young; Oh, Myung Hwan.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 2, 01.03.1997, p. 477-481.

Research output: Contribution to journalArticle

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