Anodic bonding technique under low-temperature and low-voltage using evaporated glass

Woo Beom Choi; Byeong Kwon Ju; Seong jae Jeong; Nam Yang Lee; Ken Ha Koh; M. R. Haskard; Man Young Sung; Myung Hwan Oh

Anodic bonding technique under low-temperature and low-voltage using evaporated glass

Woo Beom Choi, Byeong Kwon Ju, Seong jae Jeong, Nam Yang Lee, Ken Ha Koh, M. R. Haskard, Man Young Sung, Myung Hwan Oh

Research output: Contribution to conference › Paper › peer-review

Abstract

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at 135 °C with an applied voltage of 35 V_DC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of evaporated glass layer as an insulating layer as well as a bonding layer.

Original language	English
Pages	427-430
Number of pages	4
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12

Other

Other	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
City	St.Petersburg, Russia
Period	96/7/7 → 96/7/12

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

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title = "Anodic bonding technique under low-temperature and low-voltage using evaporated glass",

abstract = "We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at 135 °C with an applied voltage of 35 VDC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of evaporated glass layer as an insulating layer as well as a bonding layer.",

author = "Choi, {Woo Beom} and Ju, {Byeong Kwon} and Jeong, {Seong jae} and Lee, {Nam Yang} and Koh, {Ken Ha} and Haskard, {M. R.} and Sung, {Man Young} and Oh, {Myung Hwan}",

year = "1996",

language = "English",

pages = "427--430",

note = "Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC ; Conference date: 07-07-1996 Through 12-07-1996",

}

TY - CONF

T1 - Anodic bonding technique under low-temperature and low-voltage using evaporated glass

AU - Choi, Woo Beom

AU - Ju, Byeong Kwon

AU - Jeong, Seong jae

AU - Lee, Nam Yang

AU - Koh, Ken Ha

AU - Haskard, M. R.

AU - Sung, Man Young

AU - Oh, Myung Hwan

PY - 1996

Y1 - 1996

N2 - We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at 135 °C with an applied voltage of 35 VDC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of evaporated glass layer as an insulating layer as well as a bonding layer.

AB - We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at 135 °C with an applied voltage of 35 VDC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of evaporated glass layer as an insulating layer as well as a bonding layer.

UR - http://www.scopus.com/inward/record.url?scp=0030370697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030370697&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030370697

SP - 427

EP - 430

T2 - Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC

Y2 - 7 July 1996 through 12 July 1996

ER -

Anodic bonding technique under low-temperature and low-voltage using evaporated glass

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