Anodic bonding technique under low-temperature and low-voltage using evaporated glass

Woo Beom Choi, Byeong Kwon Ju, Seong jae Jeong, Nam Yang Lee, Ken Ha Koh, M. R. Haskard, Man Young Sung, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at 135 °C with an applied voltage of 35 V DC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of evaporated glass layer as an insulating layer as well as a bonding layer.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages427-430
Number of pages4
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

ASJC Scopus subject areas

  • Surfaces and Interfaces

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  • Cite this

    Choi, W. B., Ju, B. K., Jeong, S. J., Lee, N. Y., Koh, K. H., Haskard, M. R., Sung, M. Y., & Oh, M. H. (1996). Anodic bonding technique under low-temperature and low-voltage using evaporated glass. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 427-430). IEEE.