Anodic bonding technique under low-temperature and low-voltage using evaporated glass

Woo Beom Choi, Byeong Kwon Ju, Seong jae Jeong, Nam Yang Lee, Ken Ha Koh, M. R. Haskard, Man Young Sung, Myung Hwan Oh

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

We have performed silicon-to-silicon anodic bonding using glass layer deposited by electron beam evaporation. Wafers can be bonded at 135 °C with an applied voltage of 35 VDC, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that the evaporated glass layer more than 1 μm thick was suitable for anodic bonding. We have also investigated the possibility of evaporated glass layer as an insulating layer as well as a bonding layer.

Original languageEnglish
Pages427-430
Number of pages4
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

ASJC Scopus subject areas

  • Surfaces and Interfaces

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    Choi, W. B., Ju, B. K., Jeong, S. J., Lee, N. Y., Koh, K. H., Haskard, M. R., Sung, M. Y., & Oh, M. H. (1996). Anodic bonding technique under low-temperature and low-voltage using evaporated glass. 427-430. Paper presented at Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC, St.Petersburg, Russia, .