Anomalous Hall effect in insulating Ga1-xMnxAs

Sh U. Yuldashev, H. C. Jeon, H. S. Im, T. W. Kang, S. H. Lee, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x=0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMn xAs eventually disappears, and the paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in the Ga0.915Mn0.085As has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma.

Original languageEnglish
Article number193203
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
Publication statusPublished - 2004 Nov

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Anomalous Hall effect in insulating Ga1-xMnxAs'. Together they form a unique fingerprint.

Cite this